A polishing pad having excellent planarization performance and wear resistance includes a polishing layer including a polyurethane foam having fine cells. The polyurethane foam is a cured product of a reaction of (1) an isocyanate-terminated prepolymer (A) that is capable of reacting with 4,4′-methylenebis(o-chloroaniline) to form a non-foamed polyurethane having a tan δ peak temperature of 100° C. or more, (2) an isocyanate-terminated prepolymer (B) that is capable of reacting with 4,4′-methylenebis(o-chloroaniline) to form a non-foamed polyurethane having a tan δ peak temperature of 40° C. or less, and (3) 4,4′-methylenebis(o-chloroaniline), and the isocyanate-terminated prepolymers (A) and (B) are mixed in an (A)/(B) ratio of 50/50 to 90/10 (by wt%). The pad so made is used in the manufacture of semiconductor devices.
1. A polishing pad, comprising a polishing layer comprising a polyurethane foam having fine cells, wherein the polyurethane foam is a cured product of a reaction of
an isocyanate-terminated prepolymer (A) that is capable of reacting with 4,4′-methylenebis(o-chloroaniline) to form a non-foamed polyurethane having a tan δ peak temperature of 100° C. or more,
an isocyanate-terminated prepolymer (B) that is capable of reacting with 4,4′-methylenebis(o-chloroaniline) to form a non-foamed polyurethane having a tan δ peak temperature of 40° C. or less, and
4,4′-methylenebis(o-chloroaniline), and
the isocyanate-terminated prepolymers (A) and (B) are mixed in an (A)/(B) ratio of 50/50 to 90/10 (by wt %), and
wherein the isocyanate-terminated prepolymer (A) comprises isocyanate component units derived from an aromatic diisocyanate and an alicyclic diisocyanate as raw materials, and the isocyanate-terminated prepolymer (B) comprises an isocyanate component unit derived from an aromatic diisocyanate as a raw material.
2. The polishing pad of claim 1 , wherein the isocyanate-terminated prepolymer (A) comprises a unit derived from a high molecular weight polyol with a number average molecular weight of 500 to 800 as a raw material component, and the isocyanate-terminated prepolymer (B) comprises a unit derived from a high molecular weight polyol with a number average molecular weight of 1,500 to 3,000 as a raw material component.
3. The polishing pad of claim 1 , wherein the isocyanate-terminated prepolymer (A) has an NCO content of 9.8 to 15% by weight, and the isocyanate-terminated prepolymer (B) has an NCO content of 1.5 to 7% by weight.
4. A method for manufacturing a polishing pad, comprising a step of mixing a first component with a second component and curing the mixture to form a polyurethane foam, the first component comprising isocyanate-terminated prepolymers, the second component comprising a chain extender,
the step comprising adding a nonionic silicone surfactant to the first component comprising the isocyanate-terminated prepolymers so that the polyurethane foam contains 0.05 to 10% by weight of the nonionic silicone surfactant, stirring the first component together with a non-reactive gas to form a cell dispersion liquid in which the non-reactive gas is dispersed in the form of fine cells, then mixing the second component comprising the chain extender into the cell dispersion liquid, and curing the mixture to form the polyurethane foam,
the isocyanate-terminated prepolymers comprising: an isocyanate-terminated prepolymer (A) that is capable of reacting with the chain extender to form a polyurethane having a tan δ peak temperature of 100° C. or more; and an isocyanate-terminated prepolymer (B) that is capable of reacting with the chain extender to form a polyurethane having a tan δ peak temperature of 40° C. or less,
the isocyanate-terminated prepolymers (A) and (B) being mixed in an (A)/(B) ratio of 50/50 to 90/10 (by wt %),
wherein the isocyanate-terminated prepolymer (A) comprises isocyanate component units derived from an aromatic diisocyanate and an alicyclic diisocyanate as raw materials, and the isocyanate-terminated prepolymer B) comprises an isocyanate component unit derived from an aromatic diisocyanate as a raw material.
5. A method for manufacturing a semiconductor device, comprising the step of polishing a surface of a semiconductor wafer with the polishing pad of claim 1 .