A polishing pad of excellent durability has a polishing layer is arranged on a base material layer, and the polishing layer comprises a thermosetting polyurethane foam having roughly spherical interconnected cells with an average cell diameter of 35 to 300 μm.
1. A polishing pad, comprising a polishing layer arranged on a base material layer,
the polishing layer comprising a thermosetting polyurethane foam having roughly spherical interconnected cells with an average cell diameter of 35 to 300 μm,
the thermosetting polyurethane foam comprising an isocyanate component and an active hydrogen-containing compound as raw material components, the active hydrogen-containing compound comprising 60 to 85% by weight of a high-molecular-weight polyol having a hydroxyl value of 20 to 100 mg KOH/g.
2. The polishing pad according to claim 1 , wherein the thermosetting polyurethane foam is self-adhered to the base material layer.
3. The polishing pad according to claim 1 or 2 , wherein the base material layer is a foamed plastic film containing at least one resin selected from the group consisting of polyethylene, polypropylene and polyurethane.
4. The polishing pad according to claim 1 or 2 , wherein the base material layer has a thickness of 20 to 1000 μm.
5. A method for manufacturing a semiconductor device, which comprises polishing a surface of the semiconductor wafer with the polishing pad of claim 1 or 2 .
6. A method for manufacturing a substrate for a hard disk, which comprises polishing a surface of the substrate with the polishing pad of claim 1 or 2 .
7. The polishing pad according to claim 3 , wherein the base material layer has a thickness of 20 to 1000 μm.
8. A method for manufacturing a semiconductor device, which comprises polishing a surface of the semiconductor wafer with the polishing pad of claim 4 .
9. A method for manufacturing a substrate for a hard disk, which comprises polishing a surface of the substrate with the polishing pad of claim 4 .