Color image sensor with improved optical crosstalk
The invention relates to image sensors produced on a thinned silicon substrate. To limit the optical crosstalk between adjacent filters and, notably filters of different colors, the invention proposes positioning, between the adjacent filters of different colors (FR, FB, FV), a wall ( 20 ) of a material tending to reflect the light so that the light arriving obliquely on a determined filter corresponding to a first pixel does not tend to pass toward an adjacent filter or toward a photosensitive zone corresponding to an adjacent pixel but is returned by the wall to the first filter or the photosensitive zone corresponding to the first pixel. The wall is preferably made of a material with a high reflection coefficient such as aluminium and it is sunk depthwise into the thinned semiconductor layer ( 16 ), preferably in p + diffusions formed in the layer if it is of p-type.
1. An image sensor with thinned semiconductor layer lit via the opposite face to the face by which a network of photosensitive zones and circuitry for collecting the charges photogenerated by these zones have been formed, wherein said opposite face comprises, around each photosensitive zone, a wall of material reflecting the light, this wall extending depthwise into the thinned semiconductor layer.
2. The image sensor as claimed in claim 1 , wherein the wall is made from aluminum.
3. The image sensor as claimed in claim 1 , wherein the top part of the wall is formed by a surface layer of antireflection material.
4. The image sensor as claimed in claim 1 , wherein the wall is sunk into a p + -type semiconductor zone formed in the semiconductor layer containing the photosensitive zones, this layer being of p-type.
5. The image sensor as claimed in claim 1 , wherein the wall is sunk into an insulating layer.
6. The image sensor as claimed in claim 1 ,wherein the wall occupies substantially all the space that exists between photodiodes of the adjacent pixels, the color filters covering only the photodiodes.
7. The color image sensor as claimed in claim 1 , further comprising color filters, each associated with a respective photosensitive zone and laterally separated from each other by the reflecting wall.
8. The image sensor as claimed in claim 6 , wherein the top part of the wall is formed by a surface layer of antireflection material.
9. The image sensor as claimed in claim 6 , wherein the wall is sunk into a p + -type semiconductor zone formed in the semiconductor layer containing the photosensitive zones, this layer being of p-type.
10. The image sensor as claimed in claim 6 , wherein the wall is sunk into an insulating layer.
11. The image sensor as claimed in claim 7 , wherein the top part of the wall is formed by a surface layer of antireflection material.
12. The image sensor as claimed in claim 7 , wherein the wall is sunk into a p + -type semiconductor zone formed in the semiconductor layer containing the photosensitive zones, this layer being of p-type.
13. The image sensor as claimed in claim 7 , wherein the wall is sunk into an insulating layer.
14. The image sensor as claimed in claim 3 , wherein said antireflection layer is made of titanium nitride.
15. The image sensor as claimed in claim 8 , wherein said antireflection layer is made of titanium nitride.
16. The image sensor as claimed in claim 11 , wherein said antireflection layer is made of titanium nitride.
17. The image sensor as claimed in claim 2 , wherein the wall is sunk into a p + -type semiconductor zone formed in the semiconductor layer containing the photosensitive zones, this layer being of p-type.
18. The image sensor as claimed in claim 3 , wherein the wall is sunk into a p + -type semiconductor zone formed in the semiconductor layer containing the photosensitive zones, this layer being of p-type.
19. The image sensor as claimed in claim 2 , wherein the wall is sunk into an insulating layer.
20. The image sensor as claimed in claim 3 , wherein the wall is sunk into an insulating layer.