Composition for formation of upper layer film, and method for formation of photoresist pattern

1. A method for formation of photoresist pattern, comprising

a step of coating a photoresist composition on a substrate to form a photoresist film;

a step of coating, on the photoresist film, a composition for formation of upper layer film to form an upper layer film; and

a step of placing a liquid immersion medium between the upper layer film and a lens, applying an exposure ray to the photoresist film and the upper layer film via the liquid immersion medium and a mask having a particular pattern, then conducting development to obtain a resist pattern,

wherein the composition for formation of upper layer film comprises:

a resin (A) having a repeating unit represented by a following general formula (1-1) and not having a repeating unit represented by a following general formula (1-2); and

a resin (B) having a repeating unit represented by the following general formula (1-2) and not having a repeating unit represented by the following general formula (1-1),

wherein, in the above general formulas (1-1) and (1-2), R 1 is a hydrogen atom, a methyl group or a trifluoromethyl group; R 2 is a single bond, a methylene group, a linear or branched alkylene group having 2 to 6 carbon atoms, or a group represented by a general formula C(O)XR 4 , wherein X is an oxygen atom, a sulfur atom or an NH group and R 4 is a methylene group, or a linear or branched alkylene group having 2 to 6 carbon atoms; and R 3 is a linear or branched alkyl group of 1 to 12 carbon atoms, in which at least one hydrogen atom is substituted with a fluorine atom, or an alkyl group of alicyclic structure, having 1 to 12 carbon atoms, in which at least one hydrogen atom is substituted with a fluorine atom.

2. The method according to claim 1 , wherein when the composition for formation of upper layer film is coated on a surface of a photoresist film and subjected to preliminary firing at 50 to 150° C. for 1 to 360 seconds to form an upper layer film, the upper layer film has a receded contact angle θ of 70° or more to water as measured under a following condition (θ), in which a water droplet of 25 μL formed on the upper layer film is sucked at a rate of 10 μL/min.

3. The method according to claim 2 , wherein the photoresist composition comprises: a resin (X) containing an acid-dissociable group; and an acid-generating agent (Y), the resin (X) has an acid-dissociable group-containing repeating unit, and an amount of the acid-dissociable group-containing repeating unit is 30 to 60 mol % of a total amount of repeating units included in the resin (X).

4. The method according to claim 2 , wherein either or both of the resin (A) and the resin (B) have each independently at least one kind of repeating unit selected from the group consisting of following general formulas (2-1), (2-2) and (2-3)

wherein, in the general formulas (2-1), (2-2) and (2-3), R 5 is hydrogen, a methyl group or a trifluoromethyl group; R 6 , R 7 and R 8 are each independently a single bond, a methylene group, a linear or branched alkylene group having 2 to 6 carbon atoms, or an alicyclic alkylene group having 4 to 12 carbon atoms; and R 9 is a linear or branched alkyl group of 1 to 10 carbon atoms, in which at least one hydrogen atom is substituted with a fluorine atom, or an alicyclic alkyl group having 3 to 10 carbon atoms.

5. The method according to claim 2 , wherein a mass ratio of the resin (A) to the resin (B), [resin (A)/resin (B)] is 0.3 or more.