Compositions and processes for photolithography
View Patent ↗Overcoating layer compositions are provided that are applied above a photoresist composition including for immersion lithography processing as well as non-immersion imaging.
1. An overcoating composition for use with an underlying photoresist in an immersion lithography process, comprising: a first resin, a second resin that is distinct from the first resin and a solvent comprising di(propylene glycol) mono methyl ether.
2. The overcoating composition of claim 1 , wherein the solvent further comprises an alkane and/or a cycloalkane.
3. The overcoating composition of claim 2 , wherein alkane and/or cycloalkane are chosen from cyclohexane, octane, decane, dodecane and their isomers.
4. The overcoating composition of claim 1 , further comprising an acid generator compound.
5. The overcoating composition of claim 1 , wherein the acid generator compound is a photoacid generator compound.
6. The overcoating composition of claim 1 , wherein the first or second resin comprise a photoacid-labile group.
7. The overcoating composition of claim 1 , wherein the first or second resin comprises an ester, acetal, ether, hydroxyl or carboxy group.
8. A coated substrate, comprising: a photoresist composition layer on a substrate; above the photoresist layer, an overcoating composition comprising a first resin, a second resin that is distinct from the first resin and a solvent comprising di(propylene glycol) mono methyl ether.
9. The coated substrate of claim 8 , wherein the solvent further comprises an alkane and/or a cycloalkane.
10. The coated substrate of claim 9 , wherein alkane and/or cycloalkane are chosen from cyclohexane, octane, decane, dodecane and their isomers.
11. The coated substrate of claim 8 , wherein the overcoating composition further comprises an acid generator compound.
12. The coated substrate of claim 11 , wherein the acid generator compound is a photoacid generator compound.
13. The coated substrate of claim 8 , wherein the first or second resin comprise a photoacid-labile group.
14. The coated substrate of claim 8 , wherein the first or second resin comprises an ester, acetal, ether, hydroxyl or carboxy group.
15. A method for processing a photoresist composition, comprising: (a) applying on a substrate a photoresist composition; (b) applying above the photoresist composition an overcoating composition comprising a first resin, a second resin that is distinct from the first resin and a solvent comprising di(propylene glycol) mono methyl ether;
(c) exposing the photoresist layer to radiation activating for the photoresist composition.
16. The method of claim 15 , wherein the photoresist is immersion exposed and the substrate is a microelectronic wafer substrate.
17. The method of claim 15 , wherein the photoresist is exposed to radiation having a wavelength of 193 nm.
18. The method of claim 15 , wherein the solvent further comprises an alkane and/or a cycloalkane.