Carbon nano-film reversible resistance-switchable elements and methods of forming the same

1. A method of forming a microelectronic structure, the method comprising:

forming a first conductor;

forming a discontinuous film of metal nanoparticles on a surface above the first conductor, wherein the surface comprises metal surfaces and dielectric surfaces, and the dielectric surfaces comprise more surface area than the metal surfaces comprise;

forming a carbon nano-film atop the surface and the discontinuous film of metal nanoparticles;

forming a second conductor above the carbon nano-film;

forming a damascene trench or via, filling the trench or via with dielectric material that covers the carbon nano-film; and

planarizing the dielectric material to expose the carbon nano-film in the trench or via, wherein the damascene trench or via comprises the dielectric surfaces.

2. The method of claim 1 , wherein the carbon nano-film comprises a reversible resistance-switchable element.

3. The method of claim 1 , further comprising forming a semiconductor structure.

4. The method of claim 1 , further comprising forming a steering element.

5. The method of claim 4 , wherein the steering element comprises a diode.

6. The method of claim 4 , further comprising forming a memory cell.

7. The method of claim 6 , wherein the memory cell comprises the steering element in series with a reversible resistance-switchable element, and the reversible resistance-switchable element comprises the carbon nano-film.

8. The method of claim 1 , wherein the carbon nano-film comprises graphene.

9. The method of claim 1 , wherein forming the discontinuous film of metal nanoparticles comprises sintering a metal film.

10. A method of forming a microelectronic structure, the method comprising:

conditioning a deposition chamber by:

heating an air atmosphere in the chamber to a temperature of about 650° C.;

pumping out the air atmosphere until reaching an eventual pressure of about 30 mTorr;

introducing acetylene and hydrogen into the chamber;

stopping acetylene and hydrogen flow;

pumping out the acetylene and hydrogen until returning to a pressure of about 30 mTorr; and

introducing argon into the chamber until atmospheric pressure is reached;

loading a substrate into the deposition chamber, wherein the substrate comprises a discontinuous film of metal nanoparticles on a surface of the substrate;

annealing the substrate in the deposition chamber; and

depositing a carbon nano-film atop the surface and the discontinuous film of metal nanoparticles after annealing the substrate.

11. A method of forming a microelectronic structure, the method comprising:

conditioning a deposition chamber;

loading a substrate into the deposition chamber, wherein the substrate comprises a discontinuous film of metal nanoparticles on a surface of the substrate;

annealing the substrate in the deposition chamber by: reaching an initial pressure of about 30 mTorr and then bleeding in hydrogen gas, while maintaining a temperature of about 650° C. in the chamber; and

depositing a carbon nano-film atop the surface and the discontinuous film of metal nanoparticles after annealing the substrate.

12. A method of forming a microelectronic structure, the method comprising:

conditioning a deposition chamber;

loading a substrate into the deposition chamber, wherein the substrate comprises a discontinuous film of metal nanoparticles on a surface of the substrate;

annealing the substrate in the deposition chamber; and

depositing a carbon nano-film atop the surface and the discontinuous film of metal nanoparticles after annealing the substrate, wherein depositing the carbon nano-film comprises introducing acetylene and hydrogen into the chamber, while maintaining a temperature of about 650° C. in the chamber.

13. The method of claim 10 ,

wherein depositing the carbon nano-film comprises performing non-plasma-enhanced chemical vapor deposition.