Aluminum bond pads with enhanced wire bond stability
View Patent ↗An electronic device bond pad includes an Al layer located over an electronic device substrate. The Al layer includes an intrinsic group 10 metal located therein.
1. An electronic device, comprising:
a substrate;
a bond pad located over said substrate, said bond pad including:
a first aluminum layer;
a second aluminum layer located between said first aluminum layer and said substrate, and
a metal layer comprising one or more of Ni, Pd and Pt located between said first and second aluminum layers, said metal layer having a total concentration of Ni, Pd and/or Pt of at least about 50 wt. %, and
a gold wire bonded to said first aluminum layer.
2. The electronic device as recited in claim 1 , wherein said first layer includes an intermetallic region that includes intermetallic compounds of aluminum and gold.
3. The electronic device recited in claim 1 , wherein said first aluminum layer has a thickness in a range from about 10 nm to about 200 nm.
4. The electronic device as recited in claim 1 , wherein said metal layer has a thickness in a range between about 10 nm and about 200 nm.
5. The electronic device recited in claim 1 , wherein said bond pad comprises said Ni, Pd and/or Pt with an average total concentration in a range from about 0.1 wt % to about 35 wt %.
6. The electronic device recited in claim 1 , wherein said bond pad comprises said Ni, Pd and/or Pt with an average total concentration in a range from about 0.5 wt % to about 12 wt %.
7. The electronic device recited in claim 1 , wherein said bond pad comprises said Ni, Pd and/or Pt with an average total concentration in a range from about 1 wt % to about 8 wt %.
8. The electronic device recited in claim 1 , wherein said metal layer is essentially free of Ni and Pt.
9. The electronic device recited in claim 1 , further comprising a device package to which said substrate is mounted, wherein said gold wire connects a package pad of said device package to said bond pad.
10. The electronic device as recited in claim 1 , wherein said metal layer is a substantially pure layer of Ni, Pd or Pt.
11. The electronic device as recited in claim 1 , wherein said gold wire has a concentration of gold of at least about 99.99 wt. %.
12. The electronic device recited in claim 1 , wherein said metal layer is essentially free of Ni and Pd.
13. The electronic device recited in claim 1 , wherein said metal layer is essentially free of Pd and Pt.
14. An electronic device, comprising: a substrate; a bond pad located over said substrate, said bond pad including: a first aluminum layer; a second aluminum layer located between said first aluminum layer and said substrate; and a metal layer comprising Pd and/or Pt located between said first and second aluminum layers, wherein said metal layer has a total concentration of Pd and/or Pt of at least about 50 wt. %.
15. The electronic device as recited in claim 14 , further comprising a gold wire bonded to said bond pad.
16. The electronic device as recited in claim 15 , wherein said gold wire has a concentration of gold of at least about 99.99 wt. %.
17. The electronic device recited in claim 15 , further comprising a device package to which said substrate is mounted, wherein said gold wire connects a package pad of said device package to said bond pad.
18. The electronic device recited in claim 14 , wherein said metal layer is essentially free of Pt.
19. The electronic device recited in claim 14 , wherein said metal layer is essentially free of Pd.
20. The electronic device as recited in claim 14 , wherein said first layer includes an intermetallic region that includes intermetallic compounds of aluminum and gold.
21. The electronic device recited in claim 14 , wherein said first aluminum layer has a thickness in a range from about 10 nm to about 200 nm.
22. The electronic device as recited in claim 14 , wherein said metal layer has a thickness in a range between about 10 nm and about 200 nm.
23. The electronic device recited in claim 14 , wherein said bond pad comprises said Pd and/or Pt with an average total concentration in a range from about 0.1 wt % to about 35 wt %.
24. The electronic device recited in claim 14 , wherein said bond pad comprises said Pd and/or Pt with an average total concentration in a range from about 0.5 wt % to about 12 wt %.
25. The electronic device recited in claim 14 , wherein said bond pad comprises said Pd and/or Pt with an average total concentration in a range from about 1 wt % to about 8 wt %.
26. The electronic device recited in claim 14 , wherein said metal layer further comprises Ni.
27. The electronic device recited in claim 26 , wherein said metal layer has a total concentration of Ni, Pd and/or Pt of at least about 50 wt. %.