Low temperature deposition of silicon-containing films
View Patent ↗This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.
1. A process to deposit silicon nitride on a substrate in a processing chamber, comprising:
a. contacting the substrate with a nitrogen-containing source to absorb at least a portion of the nitrogen-containing source on the substrate, wherein the contacting is a plasma-enhanced process;
b. purging unabsorbed nitrogen-containing source;
c. contacting the substrate with a silicon-containing precursor to react with the portion of the absorbed nitrogen-containing source; and
d. purging unreacted silicon-containing precursor;
wherein the silicon-containing precursor is monochlorosilane and,
steps a through d are repeated at least once.
2. The process of claim 1 , wherein the process is selected from the group consisting of plasma enhanced atomic layer deposition, and plasma enhanced cyclic chemical vapor deposition; wherein the plasma is selected from the group consisting of an ammonia plasma, a nitrogen plasma, a mixture of nitrogen and hydrogen plasma, and a mixture of nitrogen and argon plasma; plasma-excited silicon precursor is optional.
3. The process of claim 2 , wherein the plasma is an in-situ generated plasma or a remotely generated plasma.
4. The process of claim 1 wherein the nitrogen-containing source for depositing silicon nitride is selected from the group consisting of nitrogen, ammonia, hydrazine, monoalkylhydrozine, dialkylhydrozine, and mixtures thereof.