Chemical mechanical polishing method and method of manufacturing semiconductor device
View Patent ↗A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.
1. A method of manufacturing a semiconductor device comprising:
forming an insulating film on a substrate;
forming a hollow portion in the insulating film;
forming a lower-layer film, an intermediate layer, and a resist film in that order on the insulating film in which the hollow portion has been formed;
subjecting the resist film to pattern exposure;
wherein the forming the lower-layer film comprises:
forming an organic film on the insulating film in which the hollow portion is formed by applying a material comprising a novolac resin as a main component so that the hollow portion is filled with the organic film and baking the material at a temperature between 90 and 160° C.; and
chemically and mechanically polishing the organic film using a slurry comprising polymer particles having a surface functional group and a water soluble polymer to planarize the organic film.
2. The method of manufacturing a semiconductor device according to claim 1 ,
wherein the surface functional group is at least one functional group selected from the group consisting of an anionic functional group, a cationic functional group, an ampholytic functional group, and a nonionic functional group.
3. The method of manufacturing a semiconductor device according to claim 1 ,
wherein the polymer particles comprise at least one resin selected from the group consisting of an acrylic resin, a polystyrene resin, a urea resin, a melamine resin, a polyacetal resin, a polycarbonate resin, and a composite thereof.
4. A method of manufacturing a semiconductor device comprising:
forming an insulating film on a substrate;
forming a hollow portion in the insulating film;
forming a lower-layer film comprising first and second organic films, an intermediate layer, and a resist film in that order on the insulating film in which the hollow portion has been formed;
subjecting the resist film to pattern exposure;
wherein the forming the lower-layer film comprises:
forming the first organic film on the insulating film in which the hollow portion is formed by applying a material comprising a novolac resin as a main component so that the hollow portion is filled with the first organic film and baking the material at a temperature between 90 and 160° C.; and
chemically and mechanically polishing the first organic film using a slurry comprising polymer particles having a surface functional group and a water soluble polymer to planarize the first organic film; and
forming the second organic film over the insulating film and the first organic film after the planarization.
5. The method of manufacturing a semiconductor device according to claim 4 ,
wherein the method further comprises baking the first and second organic films at a second temperature between 250 and 400° C.
6. The method of manufacturing a semiconductor device according to claim 4 ,
wherein the surface functional group is at least one functional group selected from the group consisting of an anionic functional group, a cationic functional group, an ampholytic functional group, and a nonionic functional group.
7. The method of manufacturing a semiconductor device according to claim 4 ,
wherein the polymer particles comprise at least one resin selected from the group consisting of an acrylic resin, a polystyrene resin, a urea resin, a melamine resin, a polyacetal resin, a polycarbonate resin, and a composite thereof.
8. A method of manufacturing a semiconductor device comprising:
forming an organic insulating film comprising an organic material on a substrate;
stacking first and second hard masks comprising an inorganic material on the organic insulating film;
forming a hollow portion in the second hard mask;
forming a lower-layer film comprising first and second organic films, an intermediate layer, and a resist film in that order on the second hard mask in which the hollow portion has been formed;
subjecting the resist film to pattern exposure;
wherein the forming the lower-layer film comprises:
forming the first organic film on the second hard mask in which the hollow portion is formed by applying a material comprising a novolac resin as a main component so that the hollow portion is filled with the first organic film and baking the material at a temperature between 90 and 160° C.; and
chemically and mechanically polishing the first organic film using a slurry comprising polymer particles having a surface functional group and a water soluble polymer to planarize the first organic film; and
forming the second organic film over the second hard mask and the first organic film after the planarization.
9. The method of manufacturing a semiconductor device according to claim 8 ,
wherein the method further comprises baking the first and second organic films at a second temperature between 250 and 400° C.
10. The method of manufacturing a semiconductor device according to claim 8 ,
wherein the surface functional group is at least one functional group selected from the group consisting of an anionic functional group, a cationic functional group, an ampholytic functional group, and a nonionic functional group.
11. The method of manufacturing a semiconductor device according to claim 8 ,
wherein the polymer particles comprise at least one resin selected from the group consisting of an acrylic resin, a polystyrene resin, a urea resin, a melamine resin, a polyacetal resin, a polycarbonate resin, and a composite thereof.
12. A method of manufacturing a semiconductor device comprising:
forming an organic insulating film comprising an organic material on a substrate;
stacking first, second, and third hard masks comprising an inorganic material on the organic insulating film;
forming a hollow portion in the third hard mask;
forming a lower-layer film comprising first and second organic films, an intermediate layer, and a resist film in that order on the third hard mask in which the hollow portion has been formed;
subjecting the resist film to pattern exposure;
wherein the forming the lower-layer film comprises:
forming the first organic film on the third hard mask in which the hollow portion is formed by applying a material comprising a novolac resin as a main component so that the hollow portion is filled with the first organic film and baking the material at a temperature between 90 and 160° C.; and
chemically and mechanically polishing the first organic film using a slurry comprising polymer particles having a surface functional group and a water soluble polymer to planarize the first organic film; and
forming the second organic film over the third hard mask and the first organic film after the planarization.
13. The method of manufacturing a semiconductor device according to claim 12 ,
wherein the method further comprises baking the first and second organic films at a second temperature between 250 and 400° C.
14. The method of manufacturing a semiconductor device according to claim 12 ,
wherein the surface functional group is at least one functional group selected from the group consisting of an anionic functional group, a cationic functional group, an ampholytic functional group, and a nonionic functional group.
15. The method of manufacturing a semiconductor device according to claim 12 ,
wherein the polymer particles comprise at least one resin selected from the group consisting of an acrylic resin, a polystyrene resin, a urea resin, a melamine resin, a polyacetal resin, a polycarbonate resin, and a composite thereof.