Schottky diodes including polysilicon having low barrier heights and methods of fabricating the same
View Patent ↗Hybrid semiconductor devices including a PIN diode portion and a Schottky diode portion are provided. The PIN diode portion is provided on a semiconductor substrate and has an anode contact on a first surface of the semiconductor substrate. The Schottky diode portion is also provided on the semiconductor substrate and includes a polysilicon layer on the semiconductor substrate and a ohmic contact on the polysilicon layer. Related Schottky diodes are also provided herein.
1. A hybrid semiconductor device, comprising:
a silicon carbide (SiC) semiconductor substrate;
a PIN diode portion on the semiconductor substrate, the PIN diode portion having an anode contact on a first surface of the semiconductor substrate;
a Schottky diode portion on the semiconductor substrate, the Schottky diode portion including a polysilicon layer on the semiconductor substrate and an ohmic contact on the polysilicon layer, the ohmic contact being different and spaced apart from the anode contact;
a SiC layer on the SiC substrate; and
a P-type SiC layer on the SiC layer, the SiC layer and the P-type SiC layer defining a trench that extends through the P-type SiC layer and exposes the SiC layer,
wherein the polysilicon layer is on the exposed portion of the SiC layer, the ohmic contact is on the polysilicon layer and wherein the anode contact of the PIN diode portion is on the P-type SiC layer.
2. The hybrid semiconductor device of claim 1 , wherein the SiC substrate comprises a semi-insulating SiC substrate.
3. The hybrid semiconductor device of claim 1 , wherein the polysilicon layer comprises an N-type polysilicon.
4. The hybrid semiconductor device of claim 1 , wherein the SiC layer comprises an insulating SiC layer.
5. The hybrid semiconductor device of claim 1 , wherein the anode contact of the PIN diode portion comprises an ohmic contact including aluminum, titanium and/or nickel.
6. The hybrid semiconductor device of claim 1 , wherein the trench comprises a first trench, the device further comprising:
an N-type SiC layer on the SiC substrate between the SiC substrate and the SiC layer, the SiC layer and the N-type SiC layer defining a second trench that extends through the SiC layer and exposes the N-type SiC layer; and
an ohmic contact on the exposed portion of the N-type SiC layer.
7. The hybrid semiconductor device of claim 1 wherein the device has barrier height of less than about 0.8 eV to about 0.3 eV.
8. The hybrid semiconductor device of claim 1 wherein the device is stable at operating temperatures up to about 250° C.
9. A method of forming a hybrid semiconductor device, comprising:
providing a PIN diode portion on a silicon carbide (SiC) semiconductor substrate, the PIN diode portion having an anode contact on a first surface of the semiconductor substrate;
providing a Schottky diode portion on the semiconductor substrate, the Schottky diode portion including a polysilicon layer on the semiconductor substrate and an ohmic contact on the polysilicon layer, the ohmic contact being different than and spaced apart from the anode contact;
providing a SiC layer on the SiC substrate;
providing a P-type SiC layer on the SiC layer;
etching a trench in the SiC layer and the P-type SiC layer that extends through the P-type SiC layer and exposes the SiC layer;
providing the polysilicon layer on the exposed portion of the SiC layer; and
providing the Ohmic contact on the polysilicon layer, wherein the anode contact of the PIN diode portion is formed on the P-type SiC layer.
10. The method of claim 9 , wherein the SiC substrate comprises a semi-insulating SiC substrate.
11. The method of claim 9 , wherein forming the polysilicon layer comprises forming an N-type polysilicon layer using chemical vapor deposition (CVD).
12. The method of claim 9 , wherein the providing the SiC layer comprises forming an insulating SiC layer.
13. The method of claim 9 , wherein the anode contact of the PIN diode portion comprises an ohmic contact including aluminum, titanium and/or nickel.
14. The method of claim 9 , wherein providing the trench comprises providing a first trench and wherein providing the SiC layer is preceded by providing an N-type SiC layer on the SiC substrate, the method further comprising:
etching the SiC layer and the N-type SiC layer to provide a second trench that extends through the SiC layer and exposes the N-type SiC layer; and
providing an ohmic contact on the exposed portion of the N-type SiC layer.
15. The method of claim 9 , wherein the device has barrier height of less than about 0.8 eV to about 0.3 eV.
16. The method of claim 9 , wherein the device is stable at operating temperatures up to about 250° C.