Control of flatband voltages and threshold voltages in high-k metal gate stacks and structures for CMOS devices

1. A material stack formed on a semiconductor substrate of a semiconductor structure having first and second regions, comprising:

an interface preparation layer formed on the semiconductor substrate, in both the first and second regions;

a high-k dielectric layer having a high dielectric constant greater than approximately 3.9, the high-k dielectric layer present over both the first and the second regions, wherein the high-k dielectric layer is formed directly on the interface preparation layer in the second region;

a germanium (Ge) material layer formed only in the first region, wherein the Ge material layer is formed directly on the interface preparation layer in the first region and the high-k dielectric layer is formed directly on the Ge material layer in the first region;

a metal nitride layer formed only in the second region, wherein the metal nitride layer is formed directly on the high-k dielectric layer in the second region; and

a conductive electrode layer formed over both the first and the second regions.

2. The material stack of claim 1 , further comprising a conductive layer disposed on top of the conductive electrode layer, the conductive layer present over both the first and the second regions.

3. The material stack of claim 2 , wherein the conductive layer comprises one of a Si-containing conductive layer or a metallic conductive layer.

4. The material stack of claim 1 , wherein the interface preparation layer comprises a chemical oxide, a thermal oxide or an oxynitride layer.

5. The material stack of claim 1 , wherein the Ge material layer comprises Ge or a Ge compound.

6. The material stack of claim 1 , wherein a thickness of the Ge material layer is less than or equal to approximately 2 nanometers (nm).

7. A semiconductor structure, comprising:

a patterned material stack disposed on a surface of a semiconductor substrate, the patterned material stack comprising:

an interface preparation layer formed on the semiconductor substrate;

a high-k dielectric layer having a high dielectric constant greater than approximately 3.9, the high-k dielectric layer formed on the interface preparation layer; and

a germanium (Ge)-containing metal electrode formed on the high-k dielectric layer, wherein the Ge-containing metal electrode comprises MGe where M denotes a conductive metal electrode material selected from the group consisting of titanium germanium nitride (TiGeN) and tantalum germanium carbon (TaGeC).

8. A method of forming a semiconductor structure having a first semiconductor device including a first patterned material stack and a second semiconductor device including a second patterned material stack, the method comprising:

providing a semiconductor substrate, the first patterned material stack formed over a first region of the substrate and the second patterned material stack formed over a second region of the substrate;

forming an interface preparation layer in the first and second patterned material stacks;

forming a metal nitride layer on the interface preparation layer of only the first patterned material stack;

forming a high-k dielectric layer, having a high dielectric constant greater than approximately 3.9, on the metal nitride layer of the first patterned material stack, and on the interface preparation layer of the second patterned material stack;

forming a Ge material layer on the high-k dielectric of both the first and second patterned material stacks; and

forming a conductive electrode layer above the Ge material layer of both the first and second patterned material stacks.

9. A method of forming a semiconductor structure having a first semiconductor device including a first patterned material stack and a second semiconductor device including a second patterned material stack, the method comprising:

providing a semiconductor substrate, the first patterned material stack formed over a first region of the substrate and the second patterned material stack formed over a second region of the substrate;

forming a high-k dielectric having a high dielectric constant greater than approximately 3.9;

forming a metal nitride layer in the first patterned material stack interfacing with the high-k dielectric;

forming a Ge material layer only in the second patterned material stack interfacing with the high-k dielectric;

forming a conductive electrode layer above the high-k dielectric, the Ge material layer, or the metal nitride layer; and

forming the metal nitride layer in the second patterned material stack interfacing with the high-k-dielectric.