Manufacturing method of semiconductor device having self-aligned contact connected to silicide layer on substrate surface
View Patent ↗A semiconductor device 100 includes: a silicon substrate 102 ; a first gate 114 a including a gate electrode 108 formed on the silicon substrate 102 and sidewalls 112 formed on the sidewalls of the gate electrode 108 ; a silicide layer 132 formed lateral to the sidewalls 112 of the first gate 114 a on a surface of the silicon substrate 102 ; and a contact 164 which overlaps at least partially in plan view with the first gate 114 a and reaches to the silicide layer 132 of the surface of the silicon substrate 102 ; wherein an insulator film is located between the contact 164 and the gate electrode 108 of the first gate 114 a.
1. A method of manufacturing a semiconductor device, comprising steps of:
forming a first gate comprising a polysilicon gate electrode and sidewalls on a silicon substrate;
forming an organic film over the first gate and a surface of the silicon substrate;
removing an upper portion of the organic film to expose an upper surface of the polysilicon gate electrode;
removing an upper portion of the polysilicon gate electrode, thereby exposing a recessed surface of the polysilicon gate electrode between the sidewalls;
removing the organic film to expose the surface of the silicon substrate;
forming a silicide layer simultaneously on the exposed surface of the silicon substrate and the recessed surface of the polysilicon gate electrode;
forming an insulator film over the silicon substrate and on the recessed surface of the polysilicon gate electrode;
forming a first contact hole extending to the silicide layer on the silicon substrate and overlying an adjacent portion of the first gate; and
forming a first self-aligned contact in the first contact hole, wherein the first self-aligned contact connects to the silicide layer on the silicon substrate, and wherein a remaining portion of the insulator film is disposed between the first self-aligned contact and the first gate.
2. The method according to claim 1 , further comprising a third gate formed side by side with said first gate on said silicon substrate, and wherein said first contact hole overlies an adjacent region of each of said first and third gates on either side of the silicide layer formed on the silicon substrate.
3. The method according to claim 1 , wherein said insulator film comprises a first insulator film in contact with said silicide layer on the surface of said silicon substrate between a third gate and said first gate, and a second insulator film having an etching selection ratio with respect to said first insulator film in contact with said first insulator film.
4. The method according to claim 3 , wherein said first insulator film is formed using a plasma CVD method.
5. The method according to claim 1 , wherein said silicon substrate has a memory region and a logic region, and wherein said first gate is formed in said memory region.
6. The method according to claim 5 , wherein:
a second gate comprising a polysilicon gate electrode and sidewalls is formed in said logic region;
said organic film is formed over said first and second gates;
an upper portion of said organic film is removed to expose an upper surface of said polysilicon gate electrode of said first gate while maintaining said organic film over said second gate;
said first contact hole and a second contact hole are simultaneously formed such that said second contact hole extends to said second gate;
a second contact is formed to connect to said second gate electrode.
7. The method for manufacturing a semiconductor device according to claim 1 , wherein:
said first gate comprises a first polysilicon layer, an intermediate insulator film, and a second polysilicon layer deposited in this order;
an upper surface of said second polysilicon layer is exposed during said removing of said organic film; and
said second polysilicon layer and said intermediate insulator film are removed to expose an upper surface of said first polysilicon layer.