Interpenetrating network for chemical mechanical polishing
View Patent ↗Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer comprising an interpenetrating network including a continuous non-fugitive phase and a substantially co-continuous fugitive phase. Also provided are methods of making the chemical mechanical polishing pads and for using them to polish substrates.
1. A chemical mechanical polishing pad for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate; comprising:
a polishing layer comprising an interpenetrating network,
wherein the interpenetrating network comprises a continuous non-fugitive phase and a substantially co-continuous fugitive phase;
wherein the continuous non-fugitive phase forms a three-dimensional network that comprises a plurality of hexahedral unit cells comprising a plurality of interconnected polishing elements that define a reticulated interstitial area;
wherein each hexahedral unit cell comprises six faces, wherein each face is selected from a square and a rectangle;
wherein the substantially co-continuous fugitive phase is disposed within the reticulated interstitial area; and,
wherein the polishing surface is adapted for polishing the substrate.
2. The chemical mechanical polishing pad of claim 1 , wherein the chemical mechanical polishing pad comprises a hydrodynamic region proximate to the polishing surface, wherein the hydrodynamic region is substantially free of the fugitive phase.
3. The chemical mechanical polishing pad of claim 2 , wherein the hydrodynamic region extends from the polishing surface into the chemical mechanical polishing pad to a depth of 1 to 100 microns.
4. The chemical mechanical polishing pad of claim 1 , wherein the polishing layer comprises 0.5 to 80 vol % of the continuous non-fugitive phase.
5. The chemical mechanical polishing pad of claim 1 , wherein the continuous non-fugitive phase is non-water soluble and the co-continuous fugitive phase is water soluble.
6. The chemical mechanical polishing pad of claim 1 , wherein the co-continuous fugitive phase melts upon exposure to heat generated during polishing.
7. The chemical mechanical polishing pad of claim 1 , wherein the continuous non-fugitive phase is not covalently bound to the co-continuous phase.
8. A method for polishing a substrate, comprising:
providing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate;
providing a chemical mechanical polishing pad having a polishing layer comprising an interpenetrating network, wherein the interpenetrating network comprises a continuous non-fugitive phase and a substantially co-continuous fugitive phase, wherein the continuous non-fugitive phase forms a three-dimensional network that comprises a plurality of hexahedral unit cells comprising a plurality of interconnected polishing elements that define a reticulated interstitial area, wherein each hexahedral unit cell comprises six faces, wherein each face is selected from a square and a rectangle, wherein the polishing layer has a polishing surface adapted for polishing the substrate;
providing a polishing medium at an interface between the polishing surface and the substrate; and,
creating dynamic contact at the interface between the chemical mechanical polishing pad and the substrate.
9. The method of claim 8 , wherein the continuous non-fugitive phase is not covalently bound to the co-continuous fugitive phase in the chemical mechanical polishing pad provided.