Methods for selective pre-coating of a plasma processing chamber

1. A method for processing a substrate in a plasma processing system, the method comprising:

disposing a first confinement ring set in a first position such that it circumscribes a first area;

depositing a first coating on a first portion of the plasma processing system using a first plasma in the first area defined by the first confinement ring set in the first position;

disposing a second confinement ring set in a position such that the first confinement ring set is interposed between the first area and the second confinement ring set when said first confinement ring set is in the first position and disposing the second confinement ring such that it circumscribes the first confinement ring set in the first position;

depositing a second coating on a second portion of the plasma processing system using a second plasma in a second area between the first confinement ring set in the first position and the second confinement ring set;

processing the substrate using a third plasma with the first confinement ring set disposed in a second position; and

wherein, the first coating is formed using the first plasma formed using an ignited silicon-containing material ignited in the first area; and

wherein, the second coating is formed using the second plasma formed using an ignited hydrocarbon-containing material ignited in the second area.

2. The method of claim 1 wherein at least one of the depositing the first coating and the depositing the second coating includes placing a dummy substrate on an electrode of the plasma processing chamber.

3. The method of claim 1 wherein the first coating and the second coating are configured to be etched by the third plasma when the substrate is processed in the plasma processing system.

4. The method of claim 1 wherein at least one of the first portion of the plasma processing system and the second portion of the plasma processing system includes at least one of an electrode, a showerhead, an induction coil, and a grounded ring.

5. The method of claim 1 wherein the first portion of the plasma processing system includes at least one of an electrode and a showerhead.

6. The method of claim 1 wherein the second portion of the plasma processing system includes at least one of an induction coil and a grounded ring.

7. The method of claim 1 wherein at least one of the first coating and the second coating includes at least one of a silicon layer, a hydrocarbon layer, a silicon dioxide layer, an amorphous silicon layer, a silicon nitride layer, and a silicon carbide layer.

8. The method of claim 1 wherein the first coating includes a silicon layer.

9. The method of claim 1 wherein the first coating has a thickness that is greater than or equal to 4.0 μm.

10. The method of claim 1 wherein the second coating includes at least one of a hydrocarbon layer and a silicon dioxide layer.

11. The method of claim 1 wherein the second coating has a thickness that is greater than or equal to 1.5 μm.

12. The method of claim 1 wherein at least one of the first coating and the second coating is bonded to a surface of at least one of the first portion of the plasma processing system and the second portion of the plasma processing system by one or more van der Waals forces.

13. The method of claim 1 wherein the first plasma is generated using a capacitively coupled plasma source, and the second plasma is generated using an inductively coupled plasma source.

14. The method of claim 1 wherein:

the first plasma comprises a plasma made using one of a hydrocarbon material or a silicon containing material; and

the second plasma comprises a plasma made using an other of the hydrocarbon material or the silicon containing material.

15. The method of claim 14 wherein the first plasma and the second plasma are ignited sequentially.

16. The method of claim 14 wherein the first plasma and the second plasma are ignited contemporaneously.

17. The method of claim 7 wherein at least one of the first coating and the second coating includes coating a showerhead within the system with a silicon containing layer.

18. A method for processing a substrate in a plasma processing system, the method comprising:

disposing a first confinement ring set in a first position;

depositing a first coating on a first portion of the plasma processing system using a first plasma in a first area defined by the first confinement ring set in the first position;

disposing a second confinement ring set in a position such that the first confinement ring set is interposed between the first area and the second confinement ring set when said first confinement ring set is in the first position;

depositing a second coating on a second portion of the plasma processing system using a second plasma in a second area between the first confinement ring set in the first position and the second confinement ring set; and

processing the substrate using a third plasma with the first confinement ring set disposed in a second position;

wherein at least one of the first coating and the second coating includes at least one of a silicon layer, a hydrocarbon layer, a silicon dioxide layer, an amorphous silicon layer, a silicon nitride layer, and a silicon carbide layer; and

wherein at least one of the first coating and the second coating comprises coating quartz surfaces within the system with a hydrocarbon layer.