Manufacturing method for silicon wafer
View Patent ↗In a manufacturing method for a silicon wafer, a first heat treatment process is performed on the silicon wafer while introducing a first gas having an oxygen gas in an amount of 0.01 vol. % or more and 1.00 vol. % or less and a rare gas, and a second heat treatment process is performed while stopping introducing the first gas and introducing a second gas having an oxygen gas in an amount of 20 vol. % or more and 100 vol. % or less and a rare gas. In the first heat treatment process, the silicon wafer is rapidly heated to first temperature of 1300° C. or higher and a melting point of silicon or lower at a first heating rate, and kept at the first temperature. In the second heat treatment process, the silicon wafer is kept at the first temperature, and rapidly cooled from the first temperature at a first cooling rate.
1. A manufacturing method for a silicon wafer comprising:
producing a silicon single crystal ingot grown by Czochralski process;
slicing the silicon single crystal ingot into plural silicon wafers;
performing a first heat treatment process on the silicon wafer while introducing a first gas having an oxygen gas in an amount of 0.01 vol. % or more and 1.00 vol. % or less and a rare gas, the first heat treatment process comprising:
rapidly heating the silicon wafer to a first temperature of 1300° C. or higher and a melting point of silicon or lower at a first heating rate; and
keeping the silicon wafer at the first temperature; and
after the first heat treatment process, performing a second heat treatment process on the silicon wafer while stopping introducing the first gas and instead, introducing a second gas having an oxygen gas in an amount of 20 vol. % or more and 100 vol. % or less and a rare gas, the second heat treatment process comprising:
keeping the silicon wafer at the first temperature; and
rapidly cooling the silicon wafer from the first temperature at a first cooling rate.
2. The manufacturing method for the silicon wafer according to claim 1 , wherein
the first heating rate is 10° C./sec or more and 150° C./sec or less and the first cooling rate is 10° C./sec or more and 150° C./sec or less.
3. A manufacturing method for a silicon wafer comprising:
producing a silicon single crystal ingot grown by Czochralski process;
slicing the silicon single crystal ingot into plural silicon wafers;
performing a first heat treatment process on the silicon wafer while introducing a first gas including a rare gas, the first heat treatment comprising:
rapidly heating the silicon wafer to a first temperature of 1300° C. or higher and the melting point of silicon or lower at a first heating rate;
keeping the silicon wafer at the first temperature;
rapidly cooling the silicon wafer to a second temperature of 800° C. or higher and 1000° C. or lower at a first cooling rate; and
keeping the silicon wafer at the second temperature; and
performing a second heat treatment process on the silicon wafer while stopping introducing the first gas and instead, introducing a second gas including an oxygen gas in an amount of 20 vol. % or more and 100 vol. % or less; the second heat treatment comprising:
keeping the silicon wafer at second temperature;
rapidly heating the silicon wafer from the second temperature to a third temperature of 1300° C. or higher and the melting point of silicon or lower at a second heating rate;
keeping the silicon wafer at the third temperature; and
rapidly cooling the silicon wafer from the third temperature at a second cooling rate.
4. The manufacturing method for a silicon wafer according to claim 3 , wherein
the first cooling rate is 20° C./sec or more and 150° C./sec or less and
the second heating rate is 20° C./sec or more and 150° C./sec or less.
5. The manufacturing method for the silicon wafer according to claim 4 , wherein
the first heating rate is 10° C./sec or more and 150° C./sec or less and
the second cooling rate is 10° C./sec or more and 150° C./sec or less.