Metal polishing slurry and polishing method

1. A metal polishing slurry containing abrasive grains, a metal-oxide-dissolving agent, a metal oxidizing agent, a metal anticorrosive agent, an organic solvent, and water,

wherein the abrasive grains are colloidal silica and contain

1 to 50% by mass of first abrasive grains having an average secondary particle diameter being in the range of 5 to 39 nm and

50 to 99% by mass of second abrasive grains having an average secondary particle diameter being in the range of 40 to 150 nm,

the metal-oxide-dissolving agent is at least one selected from organic acids, organic-acid esters, ammonium salts of organic acids, and inorganic acids,

the metal oxidizing agent is at least one selected from hydrogen peroxide, nitric acid, potassium periodate, hypochlorous acid, and ozone water,

the metal anticorrosive agent is at least one selected from a compound having a triazole skeleton, a compound having a pyrazole skeleton, a compound having a pyrimidine skeleton, a compound having an imidazole skeleton, a compound having a guanidine skeleton, and a compound having a thiazole skeleton,

and a pH is in the range of 2 to 4, and

wherein the abrasive grains consist of the colloidal silica.

2. The metal polishing slurry according to claim 1 , wherein the average secondary particle diameter of the abrasive grains is in the range of 1 to 1000 nm.

3. The metal polishing slurry according to claim 1 , wherein the abrasive grains contain abrasive grains having an average primary particle diameter being in the range of 2 to 100 nm.

4. The metal polishing slurry according to claim 1 , wherein the organic solvent is at least one selected from glycol ether compounds, alcohol compounds, and carbonate compounds.

5. The metal polishing slurry according to claim 1 , which further comprises a polymer having a weight-average molecular weight of 500 or more.

6. The metal polishing slurry according to claim 1 , wherein a polishing-receiving film to be polished with the metal polishing slurry is a polishing-receiving film containing an electroconductive material layer and a metal barrier layer.

7. The metal polishing slurry according to claim 1 , wherein a polishing-receiving film to be polished with the metal polishing slurry is a polishing-receiving film containing an electroconductive material layer and an interlayer dielectric layer.

8. The metal polishing slurry according to claim 1 , wherein a polishing-receiving film to be polished with the metal polishing slurry is a polishing-receiving film containing a metal barrier layer and an interlayer dielectric layer.

9. The metal polishing slurry according to claim 1 , wherein a polishing-receiving film to be polished with the metal polishing slurry is a polishing-receiving film containing an electroconductive material layer, a metal barrier layer and an interlayer dielectric layer.

10. The metal polishing slurry according to claim 6 , wherein the electroconductive material layer is a layer comprising at least one selected from copper, copper alloys, copper oxides, and copper alloy oxides.

11. The metal polishing slurry according to claim 6 , wherein the metal barrier layer is a single layer or a lamination made of two or more layers, and the layer(s) (each) comprise(s) at least one selected from tantalum, tantalum compounds, titanium, titanium compounds, tungsten, tungsten compounds, ruthenium, ruthenium compounds, copper-manganese alloys, and copper-manganese-silicon oxide alloys.

12. The metal polishing slurry according to claim 7 , wherein the interlayer dielectric layer is a silicon-coating film or an organic polymer film.

13. The metal polishing slurry according to claim 1 , wherein the amount of the abrasive grains is from 0.001 to 50 parts by mass, based on 100 parts by mass of the whole of the metal polishing slurry.

14. The metal polishing slurry according to claim 7 , wherein the ratio between the polishing rate of the electroconductive material layer and that of the interlayer dielectric layer is 0.72 or less.

15. A polishing method, comprising the step of polishing a polishing-receiving film while supplying the metal polishing slurry according to claim 1 , onto a polishing cloth of a polishing table by moving the polishing table and a substrate having the polishing-receiving film relatively to each other in the state that the substrate is pushed and pressed onto the polishing cloth.

16. The metal polishing slurry according to claim 7 , wherein the electroconductive material layer is a layer comprising at least one selected from copper, copper alloys, copper oxides, and copper alloy oxides.

17. The metal polishing slurry according to claim 9 , wherein the electroconductive material layer is a layer comprising at least one selected from copper, copper alloys, copper oxides, and copper alloy oxides.

18. The metal polishing slurry according to claim 8 , wherein the metal barrier layer is a single layer or a lamination made of two or more layers, and the layer(s) (each) comprise(s) at least one selected from tantalum, tantalum compounds, titanium, titanium compounds, tungsten, tungsten compounds, ruthenium, ruthenium compounds, copper-manganese alloys, and copper-manganese-silicon oxide alloys.

19. The metal polishing slurry according to claim 9 , wherein the metal barrier layer is a single layer or a lamination made of two or more layers, and the layer(s) (each) comprise(s) at least one selected from tantalum, tantalum compounds, titanium, titanium compounds, tungsten, tungsten compounds, ruthenium, ruthenium compounds, copper-manganese alloys, and copper-manganese-silicon oxide alloys.

20. The metal polishing slurry according to claim 8 , wherein the interlayer dielectric layer is a silicon-coating film or an organic polymer film.

21. The metal polishing slurry according to claim 9 , wherein the interlayer dielectric layer is a silicon-coating film or an organic polymer film.