An object of the present invention is to provide a polishing pad that is prevented from causing an end-point detection error due to a reduction in light transmittance from the early stage to the final stage of the process, and to provide a method of producing a semiconductor device with the polishing pad. The present invention is directed to a polishing pad, comprising a polishing layer comprising a polishing region and a light-transmitting region, wherein a polishing side surface of the light-transmitting region is subjected to a surface roughness treatment, and the light-transmitting region has a light transmittance of 40% to 60% at a wavelength of 600 nm before use.
1. A polishing pad, comprising a polishing layer comprising a polishing region having an aperture and a light-transmitting region inserted into the aperture in the polishing region, wherein a polishing side surface of the light-transmitting region is, prior to polishing, subjected to a surface roughness treatment so as to have a surface roughness, and the light-transmitting region has a light transmittance of 40% to 60% at a wavelength of 600 nm before use,
wherein the surface roughness of the polishing side surface of the light-transmitting region is an arithmetic mean surface roughness (Ra) of 1 μm to 2.2 μm, and
the light-transmitting region is made only of a thermoset resin material having a light transmittance of 75% or more at the wavelength of 600 nm.
2. The polishing pad according to claim 1 , wherein the polishing side surface of the light-transmitting region is flush with a polishing side surface of the polishing region.
3. A method for manufacturing a semiconductor device comprising steps of polishing a surface of a semiconductor wafer using a polishing pad according to claim 1 .