Semiconductor device and method of manufacturing the same
View Patent ↗Provided is a thin semiconductor device using a thin metal wire and having a low top portion. The semiconductor device of the present invention has a structure in which a bonding pad 55 of a semiconductor chip 54 and an electrode 53 B are connected to each other via a thin metal wire 51 , and the thin metal wire 51 forms a curve portion 57 . Specifically, the thin metal wire 51 exhibits the curve portion 57 from a first bond, and is provided with a linear second extending portion 60 with an end portion thereof being a first bend portion 59 . A second bend portion 61 is located lower than a top portion 58 of the curve portion 57.
1. A semiconductor device comprising:
a semiconductor chip having a bonding pad;
an electrode placed around the semiconductor chip; and
a thin metal wire that electrically connects the bonding pad and the electrode, wherein
the thin metal wire comprises a curve portion one end of which is connected to the bonding pad and a top portion of which is curved upward, and an extending portion that is continuous with the curve portion through a bend portion and is extended linearly toward the electrode,
the thin metal wire comprises two regions, a hard portion and a soft portion, and an interface between the hard portion and the soft portion is provided in or near the bend portion, and
the interface between the hard portion and the soft portion is provided shifted towards the electrode from the bend portion.
2. The semiconductor device according to claim 1 , wherein a height from a surface of the electrode to the top portion of the curve portion is not more than 70 μm.
3. The semiconductor device according to claim 1 , wherein a trajectory of the curve portion exhibits any one of a part of a circle and a part of an ellipse.
4. The semiconductor device according to claim 1 , wherein the hard portion is a recrystallized portion and the soft portion is a non-recrystallized portion.
5. A semiconductor device comprising:
a semiconductor chip having a bonding pad;
an electrode placed around the semiconductor chip; and
a thin metal wire that electrically connects the bonding pad and the electrode, wherein
the thin metal wire comprises a first extending portion one end of which is connected to the bonding pad and a top portion of which is curved upward, a second extending portion that is continuous with the first extending portion through a bend portion and is extended linearly toward the electrode, and a third extending portion is extended downward to the electrode from an end portion of the second extending portion,
the thin metal wire comprises two regions, a hard portion and a soft portion, and an interface between the hard portion and the soft portion is provided in or near the bend portion, and
the interface between the hard portion and the soft portion is provided shifted towards the electrode from the bend portion.
6. The semiconductor device according to claim 5 , wherein a height from a surface of the electrode to the top portion of the first extending portion is not more than 70 μm.
7. The semiconductor device according to claim 5 , wherein an interface between the second extending portion and the third extending portion is provided at the same height as the top portion or below the top portion.
8. The semiconductor device according to claim 5 , wherein the hard portion is a recrystallized portion and the soft portion is a non-recrystallized portion.
9. A semiconductor device manufacturing method in which a semiconductor chip and an electrode placed around the semiconductor chip are electrically connected with a thin metal wire by using a bonder including at least a capillary, spark means located near an end portion of the capillary, and a clamper, the method comprising the steps of:
when the spark means forms a metal ball at an end portion of the capillary, controlling a length of a hard portion of a thin metal wire extended from the metal ball, by controlling a period of time in which a current flows into the spark means, the hard portion being formed of a recrystallized portion;
connecting the metal ball to a bonding pad of the semiconductor chip; and
by using the capillary, bending a thin metal wire integral with the metal ball so as to form a first extending portion, a bend portion and a second extending portion, the first extending portion being a curve portion exhibiting a trajectory in which a top portion thereof is curved upward, the bend portion provided at a terminal end portion of the first extending portion, the second extending portion extended linearly toward the electrode, wherein
in the step of bending the thin metal wire, a terminal end region of the hard portion is located in or near the bend portion, and
the interface between the hard portion and the soft portion is provided shifted towards the electrode from the bend portion.
10. A semiconductor device comprising:
a semiconductor chip having a bonding pad;
an electrode placed around the semiconductor chip; and
a thin metal wire that electrically connects the bonding pad and the electrode, wherein
the thin metal wire comprises a curve portion one end of which is connected to the bonding pad and a top portion of which is curved upward, and an extending portion that is continuous with the curve portion through a bend portion and is extended linearly toward the electrode,
the thin metal wire comprises two regions, a hard portion and a soft portion, and an interface between the hard portion and the soft portion is provided in or near the bend portion,
the hard portion is a recrystallized portion and the soft portion is a non-recrystallized portion, and
said curve portion is formed in said hard portion that is a recrystallized portion.
11. The semiconductor device according to claim 10 , wherein said bend portion is formed in said soft portion that is a non-recrystallized portion.
12. A semiconductor device comprising:
a semiconductor chip having a bonding pad;
an electrode placed around the semiconductor chip; and
a thin metal wire that electrically connects the bonding pad and the electrode, wherein
the thin metal wire comprises a first extending portion one end of which is connected to the bonding pad and a top portion of which is curved upward, a second extending portion that is continuous with the first extending portion through a bend portion and is extended linearly toward the electrode, and a third extending portion is extended downward to the electrode from an end portion of the second extending portion,
the thin metal wire comprises two regions, a hard portion and a soft portion, and an interface between the hard portion and the soft portion is provided in or near the bend portion,
the hard portion is a recrystallized portion and the soft portion is a non-recrystallized portion, and
said curve portion is formed in said hard portion that is a recrystallized portion.
13. The semiconductor device according to claim 12 , wherein said bend portion is formed in said soft portion that is a non-recrystallized portion.
14. The semiconductor device according to any one of claims 10 and 12 , wherein
said interface between the hard portion and the soft portion is provided in the bend portion or at a position slightly shifted toward the semiconductor chip from the bend portion.
15. The semiconductor device according to any one of claims 1 , 5 , 10 and 12 , wherein
the semiconductor chip is mounted on a mounting substrate that is any one of a ceramic substrate, a printed board, a flexible sheet substrate and a silicon interposer,
the electrode is formed by a conductive pattern provided on an upper surface of the mounting substrate, and
a resin for overall encapsulation is provided.
16. The semiconductor device according to any one of claims 1 , 5 , 10 and 12 , wherein
a resin that encapsulates the semiconductor chip, the electrode and the thin metal wire is provided, and
the electrode is formed of a conductive plate and exposed from the resin to the outside.