IP Library › Granted Patent US 8,853,656
Granted Patent B2
US 8,853,656 · App. 12/535,014 · Granted Oct 7, 2014

Extreme ultraviolet light source device

Inventors: Tatsuya Yanagida (Hiratsuka, JP); Masaki Nakano (Yokohama, JP); Akira Endo (Tokyo, JP)
Assignee: Gigaphoton Inc.
H05G2/003H05G2/006H05G2/005H05G2/008
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Quick Facts
Patent No.
US 8,853,656
App. No.
12/535,014
Granted
Oct 7, 2014
Kind
B2
Abstract

Offset in the ejection direction of target material droplets is corrected in order to stabilize EUV output in an EUV light source device. An extreme ultraviolet light source device includes a droplet generation device 110 that outputs target material droplets 101 towards a predetermined plasma emission point 103 ; a charging device 130 that charges the target material droplets 101 ; a trajectory correction device 140 that generates a force field in the trajectory to correct the travel direction of the charged target material droplets 101 a so that the charged target material droplets 101 a travel towards the plasma emission point 103 ; and a laser light source 150 that irradiates, at the plasma emission point 103 , a laser beam onto the charged target material to generate plasma thereby.

Claims (36)

1. An extreme ultraviolet (EUV) light source device for irradiating a droplet at an emission point with externally supplied laser light to turn the droplet into plasma from which the EUV light is emitted, the EUV light source device comprising:

a droplet generation device configured to supply droplets;

a charge supply device configured to selectively charge the droplets to generate a charged droplet and an uncharged droplet;

a deflection device configured to deflect a trajectory of the charged droplet only toward the emission point; and

a trajectory correction device including an electrostatic lens for correcting the trajectory of the deflected droplet so that the deflected droplet reaches the emission point;

wherein the droplet generation device is inclined with respect to a trajectory toward the emission point, so that the trajectories of droplets leaving the droplet generation device are inclined with respect to a trajectory toward the emission point.

2. The EUV light source device according to claim 1 , further comprising a lens for focusing the externally supplied laser light on the emission point.

3. The EUV light source device according to claim 1 , wherein the droplet generation device includes a piezoelectric element.

4. The EUV light source device according to claim 1 , wherein the electrostatic lens having a doublet configuration including two quadrupole electrodes.

5. The EUV light source device according to claim 1 , wherein the electrostatic lens having a triplet configuration including three quadrupole electrodes.

6. The EUV light source device according to claim 1 , further comprising a debris shield magnet for discharging debris generated when the EUV light is generated.

7. An extreme ultraviolet (EUV) light source device for irradiating a droplet at an emission point with externally supplied laser light to turn the droplet into plasma from which the EUV light is emitted, the EUV light source device comprising:

a droplet generation device configured to supply droplets;

a charge supply device configured to selectively charge the droplets to generate a charged droplet and an uncharged droplet

a deflection device configured to deflect a trajectory of the charged droplet only toward the emission point; and

a trajectory correction device comprising quadrupole magnets disposed surrounding a trajectory of the deflected droplet for correcting the trajectory of the deflected droplet so that the deflected droplet reaches the emission point;

wherein the droplet generation device is inclined with respect to a trajectory toward the emission point, so that the trajectories of droplets leaving the droplet generation device are inclined with respect to a trajectory toward the emission point.

8. An extreme ultraviolet (EUV) light source device for irradiating a droplet at an emission point with externally supplied laser light to turn the droplet into plasma from which the EUV light is emitted, the EUV light source device comprising:

a droplet generator configured to supply droplets;

a charge supply device configured to selectively charge the droplets to generate a charged droplet and an uncharged droplet;

a charging controller configured to provide a driving voltage to the charge supply device in synchronization with the laser light;

a deflection device configured to deflect a trajectory of the charged droplet only toward the emission point; and

an electrostatic lens configured to correct the trajectory so that the deflected droplet reaches the emission point, the electrostatic lens comprising first to third electrodes arranged along the trajectory of the deflected droplet the first electrode being applied with a first voltage, the second electrode being applied with a second voltage, and the third electrode being applied with the first voltage;

wherein the droplet generation device is inclined with respect to a trajectory toward the emission point, so that the trajectories of droplets leaving the droplet generation device are inclined with respect to a trajectory toward the emission point.

9. The EUV light source device according to claim 8 , further comprising a lens for collecting the externally supplied laser light to the emission point.

10. The EUV light source device according to claim 8 , wherein the droplet generator includes a piezoelectric element.

11. The EUV light source device according to claim 8 , wherein the electrostatic lens has a doublet configuration comprising two quadrupole electrodes.

12. The EUV light source device according to claim 8 , wherein the electrode lens has a triplet configuration comprising three quadrupole electrodes.

13. The EUV light source device according to claim 8 , wherein further comprising a debris shield magnet for mitigating debris to be generated in association with the generation of the EUV light.

14. An extreme ultraviolet (EUV) light source device for irradiating a droplet at an emission point with externally supplied laser light to turn the droplet into plasma from which the EUV light is emitted, the EUV light source device comprising:

a droplet generator configured to supply droplets;

a charge supply device configured to selectively charge the droplets to generate a charged droplet and an uncharged droplet;

a deflection device configured to deflect a trajectory of the charged droplet only toward the emission point; and

a trajectory correction device comprising quadrupole electrodes each arranged to surround a trajectory of the deflected droplet to correct the trajectory so that the deflected droplet reaches the emission point;

wherein the droplet generation device is inclined with respect to a trajectory toward the emission point, so that the trajectories of droplets leaving the droplet generation device are inclined with respect to a trajectory toward the emission point.

15. The EUV light source device according to claim 1 , wherein the deflection device is configured to continuously be energized to deflect the trajectory of the charged droplet toward the emission point.

Assignments (3)
CORRECTIVE ASSIGNMENT TO CORRECT THE APPLICATION NUMBER FROM 12/437,678 TO 13/437,678. PREVIOUSLY RECORDED ON REEL 028594 FRAME 0965. ASSIGNOR(S) HEREBY CONFIRMS THE THE CORRECT APPLICATION NUMBER IS 13/437,678.. Recorded Aug 22, 2012
From: KOMATSU LTD.
To: GIGAPHOTON INC
Reel/Frame 028833/0090 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 20, 2012
From: KOMATSU LTD.
To: GIGAPHOTON INC.
Reel/Frame 028594/0965 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 21, 2009
From: YANAGIDA, TATSUYA; NAKANO, MASAKI; ENDO, AKIRA
To: KOMATSU LTD.; GIGAPHOTON INC.
Reel/Frame 023399/0653 →
Priority Claims (2)
JP 2008-201263 · Aug 4, 2008 · national
JP 2009-177822 · Jul 30, 2009 · national
Continuity (1)
Related Publication 20100025223A1 · Feb 4, 2010