Semiconductor device and method of manufacturing the same
View Patent ↗The invention is directed to reduction of a manufacturing cost and enhancement of a breakdown voltage of a PN junction portion abutting on a guard ring. An N− type semiconductor layer is formed on a front surface of a semiconductor substrate, and a P type semiconductor layer is formed thereon. An insulation film is formed on the P type semiconductor layer. Then, a plurality of grooves, i.e., a first groove, a second groove and a third groove are formed from the insulation film to the middle of the N− type semiconductor layer in the thickness direction thereof. The plurality of grooves is formed so that one of the two grooves next to each other among these, that is closer to an electronic device, i.e., to an anode electrode, is formed shallower than the other located on the outside of the one. Then, an insulating material is deposited in the first groove, the second groove and the third groove. The lamination body of the semiconductor substrate and the layers laminated thereon is then diced along dicing lines.
1. A semiconductor device comprising:
a semiconductor substrate;
a semiconductor layer formed on the semiconductor substrate;
an electronic device formed in the semiconductor layer; and
a guard ring formed in the semiconductor layer so as to surround the electronic device in plan view of the semiconductor device,
wherein the guard ring comprises a plurality of grooves formed in the semiconductor layer so as to surround the electronic device in the plan view of the semiconductor device, an insulating material is deposited in each of the grooves, the depths of the grooves are different from each other, and each of the grooves penetrates through the semiconductor layer, and
a first groove of the grooves is formed next to a second groove of the grooves, the electronic device is closer to the first groove than to the second groove, and the first groove is narrower than the second groove.
2. The semiconductor device of claim 1 , wherein the first groove is shallower than the second groove.
3. A semiconductor device comprising:
a semiconductor substrate;
a semiconductor layer formed on the semiconductor substrate;
an electronic device formed in the semiconductor layer; and
a guard ring formed in the semiconductor layer so as to surround the electronic device in plan view of the semiconductor device,
wherein the guard ring comprises a plurality of grooves formed in the semiconductor layer so as to surround the electronic device in the plan view of the semiconductor device, an insulating material is deposited in each of the grooves, the depths of the grooves are different from each other, and a first groove of the grooves is formed next to a second groove of the grooves, the electronic device is closer to the first groove than to the second groove, and the first groove is deeper than the second groove.
4. A semiconductor device comprising:
a semiconductor substrate;
a semiconductor layer formed on the semiconductor substrate;
an electronic device formed in the semiconductor layer; and
a guard ring formed in the semiconductor layer so as to surround the electronic device in plan view of the semiconductor device,
wherein the guard ring comprises a plurality of grooves formed in the semiconductor layer so as to surround the electronic device in the plan view of the semiconductor device, an insulating material is deposited in each of the grooves, the depths of the grooves are different from each other, and the insulating material fills each of the grooves at least partially so as to cover at least the semiconductor layer in each of the grooves, and extends outside the grooves so as to cover a portion of a top surface of the semiconductor layer.
5. A method of manufacturing a semiconductor device, comprising:
forming a semiconductor layer on a semiconductor substrate;
forming an electronic device in the semiconductor layer;
forming a plurality of grooves in the semiconductor layer so as to surround the electronic device in plan view of the semiconductor device and to penetrate through the semiconductor layer, the grooves having depths different from each other;
depositing an insulating material in each of the grooves to form a guard ring comprising the grooves having the insulating material therein; and
dicing the semiconductor substrate and the semiconductor layer along a dicing line provided outside the guard ring,
wherein a first groove of the grooves is formed next to a second groove of the grooves, the electronic device is closer to the first groove than to the second groove, and the first groove is narrower than the second groove.
6. The method of claim 5 , wherein the first groove is shallower than the second groove.
7. A method of manufacturing a semiconductor device, comprising:
forming a semiconductor layer on a semiconductor substrate;
forming an electronic device in the semiconductor layer;
forming a plurality of grooves in the semiconductor layer so as to surround the electronic device in plan view of the semiconductor device, the grooves having depths different from each other;
depositing an insulating material in each of the grooves to form a guard ring comprising the grooves having the insulating material therein; and
dicing the semiconductor substrate and the semiconductor layer along a dicing line provided outside the guard ring,
wherein a first groove of the grooves is formed next to a second groove of the grooves, the electronic device is closer to the first groove than to the second groove, and the first groove is deeper than the second groove.
8. A method of manufacturing a semiconductor device, comprising:
forming a semiconductor layer on a semiconductor substrate;
forming an electronic device in the semiconductor layer;
forming a plurality of grooves in the semiconductor layer so as to surround the electronic device in plan view of the semiconductor device, the grooves having depths different from each other;
depositing an insulating material in each of the grooves to form a guard ring comprising the grooves having the insulating material therein; and
dicing the semiconductor substrate and the semiconductor layer along a dicing line provided outside the guard ring,
wherein the insulating material fills each of the grooves at least partially so as to cover at least the semiconductor layer in each of the grooves, and extends outside the grooves so as to cover a portion of a top surface of the semiconductor layer.
9. The method of claim 5 , wherein the forming of the grooves in the semiconductor layer comprises a Bosch process.