Vapor Deposition Reactor
A vapor deposition reactor includes a reaction module includes a first injection unit for injecting a first material onto a substrate. At least one second injection unit is placed within the first injection unit for injecting a second material onto the substrate. The substrate passes the reaction module through a relative motion between the substrate and the reaction module. The vapor deposition reactor advantageously injects a plurality of materials onto the substrate while the substrate passes the reaction module without exposing the substrate to the atmosphere in a chamber.
1 . A vapor deposition reactor comprising a first reaction module, the first reaction module comprising:
a first injection unit for injecting a first material onto a substrate; and
at least one second injection unit within the first injection unit for injecting a second material to the substrate, the substrate passing the reaction module by a relative motion between the substrate and the reaction module.
2 . The vapor deposition reactor according to claim 1 , wherein the reaction module further comprises an exhaust unit for discharging a material outside the vapor deposition reactor, and wherein the first injection unit and the second injection unit are placed within the exhaust unit.
3 . The vapor deposition reactor according to claim 1 , further comprising a chamber for receiving the reaction module.
4 . The vapor deposition reactor according to claim 1 , wherein the first material comprises a purge gas.
5 . The vapor deposition reactor according to claim 4 , wherein the purge gas is selected from a group consisting of N 2 , Ar, He and a combination thereof.
6 . The vapor deposition reactor according to claim 1 , further comprising a second reaction module, and wherein the second injection units of the first and the second reaction modules inject different second materials onto the substrate.
7 . The vapor deposition reactor according to claim 6 , wherein the second materials form a thin film on the substrate by reaction or substitution.
8 . The vapor deposition reactor according to claim 1 , wherein the at least one second injection unit comprises a plurality of the second injection units, each second injection unit injecting different second materials onto the substrate.
9 . The vapor deposition reactor according to claim 8 , wherein the second materials form a thin film on the substrate by reaction or substitution.
10 . The vapor deposition reactor according to claim 1 , wherein the distance between the first injection unit and the at least one second injection unit is determined based on deposition properties of a thin film to be formed by the vapor deposition reactor.
11 . The vapor deposition reactor according to claim 1 , wherein the second material comprises a reactant precursor or a source precursor.
12 . The vapor deposition reactor according to claim 11 , wherein the reactant precursor is selected from a group consisting of H 2 O, H 2 O 2 , O 2 , N 2 O, O 3 , O* radical, NH 3 , NH 2 —NH 2 , N 2 , N* radical, CH 4 , C 2 H 6 , H 2 , H* radical and a combination thereof.
13 . The vapor deposition reactor according to claim 11 , wherein the source precursor is selected from a group consisting of a group IV compound, a group III-V compound, a group II-VI compound, a Ni-based compound, a Co-based compound, a Cu-based compound, an Al-based compound, a Ti-based compound, a Hf-based compound, a Zr-based compound, a Ta-based compound, a Mo-based compound, a W-based compound, a Si-based compound, a Zn-based compound and a combination thereof.
14 . The vapor deposition reactor according to claim 1 , wherein the first injection unit comprises at least one of a plasma generator, an ultrahigh frequency wave generator and a UV generator.
15 . The vapor deposition reactor according to claim 1 , wherein the reaction module further comprises at least one electrode for generating plasma between the first injection unit and the second injection unit.
16 . The vapor deposition reactor according to claim 15 , wherein the at least one electrode is configured to apply an electric field in a direction parallel to moving direction of the substrate.
17 . The vapor deposition reactor according to claim 1 , wherein at least one channel in a shape of a linear pipe and at least one hole in each of the at least one channel are formed in the first injection unit and the second injection unit.
18 . The vapor deposition reactor according to claim 17 , wherein at least two channels are formed in the first injection unit and the second injection unit, each injecting different materials onto the substrate.