IP Library Granted Patent US 8,283,260
Granted Patent B2
US 8,283,260 · App. 12/540,395 · Granted Oct 9, 2012

Process for restoring dielectric properties

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Quick Facts
Patent No.
US 8,283,260
App. No.
12/540,395
Granted
Oct 9, 2012
Kind
B2
Abstract

A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layer has a third dielectric constant that is restored to a value that is at least 90% restored relative to the second dielectric constant.

Claims (17)

1. A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of:

depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface;

providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant;

contacting the at least one surface of the layer with a silicon-containing fluid;

removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and

exposing the at least one surface of the layer to an energy source comprising UV radiation, wherein the layer has a third dielectric constant that is restored to a value that is at least 90% restored relative to the second dielectric constant.

2. The method of claim 1 wherein the energy source also comprises thermal energy.

3. The method of claim 1 wherein the wet chemical composition comprises:

a. a fluoride ion source;

b. a pH buffer system comprising a polyprotic acid having at least three carboxylic acid groups and its conjugate base;

c. a solvent having at least one polyhydric alcohol; and

d. water.

4. The method of claim 3 wherein the wet chemical composition consists essentially of from about 25 to about 50 weight percent glycerol; from about 40 to about 70 weight percent water; from about 0.5 to about 1.5 weight percent of a 29% solution of citric acid; from about 3 to about 7 weight percent of a 50% solution of ammonium citrate tribasic; and from about 1 to about 5 weight percent of 40% solution of ammonium fluoride.

5. The method of claim 4 , wherein the wet chemical composition consist essentially of 55.0 weight percent of water; 0.5 weight percent of Citric Acid (29%); 39.3 weight percent of Glycerol; 3.2 weight percent of Ammonium citrate tribasic (50% solution); and 2.0 weight percent of NH 4 F (40%).

6. The method of claim 1 wherein the wet chemical composition comprises: water; acetic acid; propylene glycol; dipropylene glycol monomethyl ether; and ammonium fluoride.

7. The method of claim 6 wherein the wet chemical composition consists essentially of from about 70 to about 90 weight percent of water; from about 0.2 to about 1.0 weight percent of a glacial acetic acid solution; from about 1.0 to about 10 weight percent of propylene glycol; from about 1.0 to about 10 weight percent of dipropylene glycol monomethyl ether; and from about 0.05 to about 0.3 weight percent of a 40% solution of ammonium fluoride.

8. The method of claim 7 , wherein the wet chemical composition consists essentially of 90.00 weight percent of water; 0.50 weight percent of Acetic Acid; 4.40 weight percent of Propylene glycol; 5.00 weight percent of Dipropylene glycol monomethyl ether; and 0.10 weight percent of NH 4 F (40%).

Assignments (4)
RELEASE OF SECURITY INTEREST Recorded Oct 7, 2019
From: CITIBANK, N.A., AS AGENT
To: VERSUM MATERIALS US, LLC
Reel/Frame 050647/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 20, 2017
From: AIR PRODUCTS AND CHEMICALS, INC.
To: VERSUM MATERIALS US, LLC
Reel/Frame 041772/0733 →
PATENT SECURITY AGREEMENT Recorded Oct 27, 2016
From: VERSUM MATERIALS US, LLC
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 040503/0442 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2009
From: WEIGEL, SCOTT JEFFREY; O'NEILL, MARK LEONARD; HAAS, MARY KATHRYN; MATZ, LAURA M.; MITCHELL, GLENN MICHAEL; WU, AIPING; VRTIS, RAYMOND NICHOLAS; LANGAN, JOHN GILES
To: AIR PRODUCTS AND CHEMICALS, INC.
Reel/Frame 023267/0003 →