IP Library Granted Patent US 8,591,657
Granted Patent B2
US 8,591,657 · App. 12/548,752 · Granted Nov 26, 2013

Substrate processing apparatus and method of manufacturing semiconductor device

Inventors: Takayuki Nakada (Toyama, JP); Tomoyuki Matsuda (Toyama, JP); Shinya Morita (Toyama, JP)
Assignee: Hitachi Kokusai Electric Inc.
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Quick Facts
Patent No.
US 8,591,657
App. No.
12/548,752
Granted
Nov 26, 2013
Kind
B2
Abstract

Metal corrosion and substrate contamination can be suppressed, and process quality and yield can be improved. A substrate processing apparatus comprises: a process chamber; a substrate holder; a cover part closing and opening the process chamber; a substrate holder stage; a rotary mechanism rotating the substrate holder stage; a rotation shaft inserted through the cover part and connected to the substrate holder stage and the rotary mechanism so that a first gas ejection port is formed therebetween; a first gas stagnant part surrounded by the rotary mechanism, the cover part, and the rotation shaft; a second gas ejection port formed at the substrate holder stage; a second gas stagnant part formed at the rotation shaft and communicating with the process chamber via the second gas ejection port; and a flow port formed at the rotation shaft for connecting the first and second gas stagnant parts.

Claims (53)

1. A substrate processing apparatus comprising:

a process chamber configured to process a substrate;

a substrate holder configured to hold the substrate;

a cover part having a first penetration hole extending from an inside to an outside of the process chamber, the cover part configured to close and open the process chamber while loading and unloading the substrate holder into and from the process chamber;

a substrate holder stage whereon the substrate holder is placed,

wherein at least a portion of the substrate holder stage is made of a metal;

a rotary mechanism installed at a side of the cover part opposite to the process chamber so as to rotate the substrate holder stage;

a rotation shaft inserted through the first penetration hole and connected to the substrate holder stage and the rotary mechanism;

a first gas ejection port defined by an inner circumferential surface of the cover part and the rotation shaft;

a first gas stagnant part surrounded by the rotary mechanism, the rotation shaft and the cover part, the first gas stagnant part communicating with the process chamber via the first gas ejection port;

a second gas ejection port comprising at least a second penetration hole extending from a surface of the substrate holder stage whereon the substrate holder is placed to an opposite surface thereof facing the rotary mechanism;

a second gas stagnant part disposed at the rotation shaft and communicating with the process chamber via the second gas ejection port; and

a flow port disposed at the rotation shaft, the flow part connecting the first gas stagnant part and the second gas stagnant part,

wherein a ratio of a volume of the second gas stagnant part to that of the second gas ejection port is equal to or greater than a ratio of a volume of the first gas stagnant part to a sum of volumes of the first gas ejection port and the flow port.

2. The substrate processing apparatus of claim 1 , further comprising a locking shaft inserted through the rotation shaft, the locking shaft being configured to lock the substrate holder and rotate relative to the rotation shaft,

wherein the second gas stagnant part is disposed between the rotation shaft and the locking shaft, and

wherein the second gas ejection port is disposed at least between an inner circumferential surface of the substrate holder stage and the locking shaft.

3. The substrate processing apparatus of claim 1 ,

wherein some of gas supplied to the first gas stagnant part is ejected from the first gas stagnant part to the process chamber through the first gas ejection port with a first flow velocity, and

wherein at least the rest of the gas supplied to the first gas stagnant part is supplied from the first gas stagnant part to the second gas stagnant part through the flow port and is ejected from the second gas stagnant part to the process chamber through the second gas ejection port with a flow velocity equal to or greater than the first flow velocity.

4. A substrate processing apparatus comprising:

a process chamber configured to process a substrate;

a substrate holder configured to hold the substrate;

a cover part having a first penetration hole extending from an inside to an outside of the process chamber, the cover part configured to close and open the process chamber while loading and unloading the substrate holder into and from the process chamber;

a substrate holder stage whereon the substrate holder is placed, wherein at least a portion of the substrate holder stage is made of a metal;

a rotary mechanism installed at a side of the cover part opposite to the process chamber so as to rotate the substrate holder stage;

a rotation shaft inserted through the first penetration hole and connected to the substrate holder stage and the rotary mechanism;

a first gas ejection port defined by an inner circumferential surface of the cover part and the rotation shaft;

a first gas stagnant part surrounded by the rotary mechanism, the cover part and the rotation shaft, the first gas stagnant part communicating with the process chamber via the first gas ejection port;

a second gas ejection port comprising at least a second penetration hole extending from a surface of the substrate holder stage whereon the substrate holder is placed to an opposite surface thereof facing the rotary mechanism;

a second gas stagnant part disposed at the rotation shaft and communicating with the process chamber via the second gas ejection port; and

a flow port disposed at the rotation shaft, the flow part connecting the first gas stagnant part and the second gas stagnant part.

5. The substrate processing apparatus of claim 4 , further comprising:

a locking shaft inserted through the rotation shaft, the locking shaft being configured to lock the substrate holder and rotate relative to the rotation shaft,

wherein the second gas stagnant part is disposed between the rotation shaft and the locking shaft, and

wherein the second gas ejection port is disposed at least between an inner circumferential surface of the substrate holder stage and the locking shaft.

6. A substrate processing apparatus comprising:

a process chamber configured to process a substrate;

a substrate holder configured to hold the substrate;

a cover part having a first penetration hole extending from an inside to an outside of the process chamber, the cover part configured to close and open the process chamber while loading and unloading the substrate holder into and from the process chamber;

a substrate holder stage whereon the substrate holder is placed, wherein at least a portion of the substrate holder stage is made of a metal;

a rotary mechanism installed at a side of the cover part opposite to the process chamber so as to rotate the substrate holder stage;

a rotation shaft inserted through the first penetration hole and connected to the substrate holder stage and the rotary mechanism;

a first gas ejection port defined by an inner circumferential surface of the cover part and the rotation shaft;

a first gas stagnant part surrounded by the rotary mechanism, the cover part and the rotation shaft, the first gas stagnant part communicating with the process chamber via the first gas ejection port;

a second penetration hole extending from a surface of the substrate holder stage whereon the substrate holder is placed to an opposite surface thereof facing the rotary mechanism;

a second gas ejection port disposed at an upper side of the rotation shaft and communicating with the second penetration hole;

a second gas stagnant part disposed at the rotation shaft and communicating with the process chamber via the second gas ejection port; and

a flow port disposed at the rotation shaft, the flow part connecting the first gas stagnant part and the second gas stagnant part.

7. The substrate processing apparatus of claim 6 , further comprising:

a locking shaft inserted through the rotation shaft, the locking shaft being configured to lock the substrate holder and rotate relative to the rotation shaft,

wherein the second gas stagnant part is disposed between the rotation shaft and the locking shaft, and

wherein the second gas ejection port is disposed at least between an inner circumferential surface of the substrate holder stage and the locking shaft.

Assignments (2)
CHANGE OF NAME Recorded Nov 26, 2018
From: HITACHI KOKUSAI ELECTRIC INC.
To: KOKUSAI ELECTRIC CORPORATION
Reel/Frame 047620/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 2, 2009
From: NAKADA, TAKAYUKI; MATSUDA, TOMOYUKI; MORITA, SHINYA
To: HITACHI KOKUSAI ELECTRIC, INC.
Reel/Frame 023318/0083 →
Priority Claims (2)
JP 2008-222061 · Aug 29, 2008 · national
JP 2009-162263 · Jul 8, 2009 · national
Continuity (1)
Related Publication 20100055918A1 · Mar 4, 2010