Tunneling magnetoresistive (TMR) device with improved ferromagnetic underlayer for MgO tunneling barrier layer
View Patent ↗A tunneling magnetoresistance (TMR) device, like a TMR read head for a magnetic recording hard disk drive, has a magnesium oxide (MgO) tunneling barrier layer and a ferromagnetic underlayer beneath and in direct contact with the MgO tunneling barrier layer. The ferromagnetic underlayer comprises a crystalline material according to the formula (Co x Fe (100-x) ) (100-y) Ge y , where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 26 and 37. The ferromagnetic underlayer may be the Co x Fe (100-x) ) (100-y) Ge y portion of a bilayer of two ferromagnetic layers, for example a CoFe/(Co x Fe (100-x) ) (100-y) Ge y bilayer. The specific composition of the ferromagnetic underlayer improves the crystallinity of the MgO tunneling barrier after annealing and improves the tunneling magnetoresistance of the TMR device.
1. A tunneling magnetoresistive (TMR) device comprising:
a substrate;
a first ferromagnetic layer on the substrate and having a composition according to the formula (Co x Fe (100-x) ) (100-y) Ge y , where x is between 45 and 55 atomic percent, and y is between 26 and 37 atomic percent;
a tunneling barrier layer consisting essentially of MgO directly on and in contact with the first ferromagnetic layer; and
a second ferromagnetic layer on the tunneling barrier layer.
2. The device of claim 1 wherein the first ferromagnetic is a free ferromagnetic layer having an in-plane magnetization direction substantially free to rotate in the presence of an external magnetic field layer, and the second ferromagnetic layer is part of a pinned layer structure having an in-plane magnetization direction substantially prevented from rotation in the presence of an external magnetic field.
3. The device of claim 1 wherein the first ferromagnetic layer is part of a pinned layer structure having an in-plane magnetization direction substantially prevented from rotation in the presence of an external magnetic field, and the second ferromagnetic layer is a free ferromagnetic layer having an in-plane magnetization direction substantially free to rotate in the presence of an external magnetic field.
4. The device of claim 3 wherein the pinned layer structure is an antiparallel (AP) pinned structure comprising a first AP-pinned (AP 1 ) ferromagnetic layer having an in-plane magnetization direction, a second AP-pinned (AP 2 ) ferromagnetic layer adjacent the tunneling barrier layer and having an in-plane magnetization direction substantially antiparallel to the magnetization direction of the AP 1 layer, and an AP coupling (APC) layer between and in contact with the AP 1 and AP 2 layers.
5. The device of claim 4 wherein the AP-pinned structure is a self-pinned structure.
6. The device of claim 4 further comprising an antiferromagnetic layer exchange-coupled to the AP 1 layer for pinning the magnetization direction of the AP 1 layer.
7. The device of claim 4 further comprising a hard magnetic layer in contact with the AP 1 layer for pinning the magnetization direction of the AP 1 layer.
8. The device of claim 3 wherein the pinned structure is a simple pinned structure comprising an antiferromagnetic pinning layer, a ferromagnetic layer consisting essentially of Co and Fe in contact with the antiferromagnetic pinning layer, and wherein said first ferromagnetic layer is in contact with said ferromagnetic CoFe layer.
9. The device of claim 1 wherein the device is a magnetoresistive read head for reading magnetically recorded data from tracks on a magnetic recording medium, and wherein the substrate is a first shield formed of magnetically permeable material.
10. A tunneling magnetoresistive (TMR) read head comprising:
a first shield layer of magnetically permeable material;
an antiparallel (AP) pinned structure comprising a first AP-pinned (AP 1 ) ferromagnetic layer on the first shield layer and having an in-plane magnetization direction, a second AP-pinned (AP 2 ) ferromagnetic layer having an in-plane magnetization direction substantially antiparallel to the magnetization direction of the AP 1 layer and comprising a layer of (Co x Fe (100-x) ) (100-y) Ge y , where x is between 45 and 55 atomic percent and y is between 26 and 37 atomic percent, and an AP coupling (APC) layer between and in contact with the AP 1 and AP 2 layers;
an electrically insulating tunneling barrier layer consisting essentially of MgO on and in contact with the (Co x Fe (100-x) ) (100-y) Ge y layer;
a free ferromagnetic layer on the tunneling barrier layer, the free ferromagnetic layer having an in-plane magnetization direction oriented substantially orthogonal to the magnetization directions of the AP 1 and AP 2 layers in the absence of an external magnetic field;
a capping layer on the free ferromagnetic layer; and
a second shield layer of magnetically permeable material on the capping layer.
11. The read head of claim 10 wherein the AP 2 layer comprises a ferromagnetic layer consisting essentially of Co and Fe between the APC layer and the (Co x Fe (100-x) ) (100-y) Ge y layer.
12. The read head of claim 10 wherein the AP-pinned structure is a self-pinned structure.
13. The read head of claim 10 further comprising an antiferromagnetic layer exchange-coupled to the AP 1 layer for pinning the magnetization direction of the AP 1 layer.
14. The read head of claim 10 further comprising a hard magnetic layer in contact with the AP 1 layer for pinning the magnetization direction of the AP 1 layer.