Package substrate having semiconductor component embedded therein and fabrication method thereof
A package substrate having a semiconductor component embedded therein and a method of fabricating the same are provided, including: providing a semiconductor chip with electrode pads disposed on an active surface thereof; forming a passivation layer on the active surface and the electrode pads; forming on the passivation layer metal pads corresponding in position to the electrode pads, respectively, so as for the semiconductor chip to be fixed in position to an opening of a substrate body; forming a first dielectric layer on the semiconductor chip and the substrate body; forming dielectric layer openings by laser and preventing the electrode pads from being penetrated by the metal pads; removing the metal pads and the passivation layer in the dielectric layer openings so as to expose the electrode pads therefrom; and forming a first wiring layer on the first dielectric layer for electrical connection with the electrode pads.
1. A package substrate having a semiconductor component embedded therein, comprising:
a substrate body having at least an opening;
a semiconductor chip fixed in position to the opening of a substrate body and having an active surface with a plurality of electrode pads thereon and an opposing inactive surface, wherein a passivation layer is disposed on the active surface, the passivation layer having a plurality of passivation layer openings corresponding in position to the electrode pads, respectively;
a plurality of metal rings disposed on the passivation layer openings;
a first dielectric layer disposed on the substrate body, the passivation layer, and the metal rings, wherein a plurality of dielectric layer openings corresponding in position to the electrode pads, respectively, are formed to penetrate the first dielectric layer and expose the electrode pads therefrom; and
a first wiring layer disposed on the first dielectric layer and electrically connected to the electrode pads by a plurality of first conductive vias formed in the dielectric layer openings and passivation layer openings, respectively, and configured to be in contact with the metal rings, respectively.
2. The package substrate of claim 1 , wherein the passivation layer comprises a first passivation layer having a plurality of openings for exposing the electrode pads therefrom and a second passivation layer formed on the first passivation layer and covering the electrode pads.
3. The package substrate of claim 2 , wherein the first passivation layer is made of silicon nitride (Si 3 N 4 ) or silicon dioxide (SiO 2 ).
4. The package substrate of claim 2 , wherein the second passivation layer is made of polyimide or benzocyclobutene (BCB).
5. The package substrate of claim 1 , further comprising a built-up structure disposed on the first dielectric layer and first wiring layer.
6. The package substrate of claim 5 , wherein the built-up structure comprises at least a second dielectric layer, a second wiring layer stacked on the second dielectric layer, a plurality of second conductive vias formed in the second dielectric layer and electrically connected to the first and second wiring layers, and a plurality of electrical contact pads electrically connected to the second wiring layer.
7. The package substrate of claim 6 , further comprising an insulating protection layer disposed on the built-up structure and having a plurality of insulating protection layer openings for exposing the electrical contact pads therefrom, respectively.