Method for production of silicon wafer for epitaxial substrate and method for production of epitaxial substrate
View Patent ↗A method for producing a silicon wafer for epitaxial substrate which includes a first step of performing thermal oxidization on a silicon wafer containing boron atoms no less than 1E19 atoms/cm 3 , thereby forming a silicon oxide film on the surface of the silicon wafer, a second step of peeling off the silicon oxide film, and a third step of performing heat treatment on the silicon wafer in a hydrogen atmosphere.
1. A method for producing a silicon wafer for an epitaxial substrate, comprising:
a first step of performing thermal oxidization on a silicon wafer containing boron atoms no less than 1E19 atoms/cm 3 , thereby forming a silicon oxide film on a surface of the silicon wafer;
a second step of peeling off the silicon oxide film by wet treating without hydrogen heat treatment; and
a third step of performing heat treatment on the silicon wafer in a hydrogen atmosphere, wherein the silicon oxide film was previously peeled off during the second step,
wherein during the first step the thermal oxidization is performed on both surfaces of the silicon wafer, and during the second step the silicon oxide film is peeled off with regard to both surfaces of the silicon wafer.
2. The method according to claim 1 , wherein the first step is carried out in such a way that the silicon wafer is heated at 1000-1100° C. in an oxidizing atmosphere.
3. The method according to claim 2 , wherein the third step is carried out in such a way that the silicon wafer is heated at 1000-1200° C.
4. The method according to claim 1 , wherein the third step is carried out in such a way that the silicon wafer is heated at 1000-1200° C.
5. The method according to claim 1 , wherein buffered hydrofluoric acid is used for performing the wet treating.
6. A method for producing an epitaxial substrate, comprising:
a first step of performing thermal oxidization on a silicon wafer containing boron atoms no less than 1E19 atoms/cm 3 , thereby forming a silicon oxide film on a surface of the silicon wafer;
a second step of peeling off the silicon oxide film by wet treating without hydrogen heat treatment;
a third step of performing heat treatment on the silicon wafer in a hydrogen atmosphere, wherein the silicon oxide film was previously peeled off during the second step; and
a fourth step of forming single-crystal silicon film on the silicon wafer which has undergone heat treatment
wherein during the first step the thermal oxidization is performed on both surfaces of the silicon wafer, and during the second step the silicon oxide film is peeled off with regard to both surfaces of the silicon wafer.
7. The method according to claim 6 , wherein the first step is carried out in such a way that the silicon wafer is heated at 1000-1100° C. in an oxidizing atmosphere.
8. The method according to claim 7 , wherein the third step is carried out in such a way that the silicon wafer is heated at 1000-1200° C.
9. The method according to claim 6 , wherein the third step is carried out in such a way that the silicon wafer is heated at 1000-1200° C.
10. The method according to claim 6 , wherein the buffered hydrofluoric acid is used for performing the wet treating.