VOLTAGE SWITCHABLE DIELECTRIC MATERIAL CONTAINING BORON COMPOUND
A composition of voltage switchable dielectric (VSD) material that comprises Boron. According to embodiments, VSD material is formulated that includes particle constituents that include one or more of Boron-nitride polymers, Boron nanotubes, and/or Boron nanoparticles.
1 . A composition of voltage switchable dielectric (VSD) material comprising Boron material.
2 . The composition of claim 1 , wherein the Boron material comprises a concentration of nano-dimensioned Boron particles.
3 . The composition of claim 1 , wherein the Boron material includes Boron-nitride.
4 . The composition of claim 1 , wherein the Boron material includes Boron-nitride polymers.
5 . The composition of claim 2 , wherein the Boron material includes Boron-nitride nanotubes.
6 . The composition of claim 1 , wherein the VSD material further comprises a concentration of high-aspect ratio nano-particles other than Boron material.
7 . The composition of claim 5 , wherein the concentration of high-aspect ratio nano-particles include organic high-aspect ratio particles.
8 . The composition of claim 5 , wherein the concentration of high-aspect ratio nano-particles include metallic high-aspect ratio particles.
9 . The composition of claim 1 , wherein the Boron material includes a combination of Boron-nitride polymers, Boron nanoparticles, and/or Boron nanorods.
11 . The composition of claim 1 , further comprising a concentration of particles that exceeds a percolation threshold of the VSD composition.
12 . The composition of claim 1 , further comprising a concentration of varistor particles.
13 . A method for forming a composition of voltage switchable dielectric (VSD) material, the method comprising:
selecting particle constituents for the composition, wherein at least some of the particle constituents include Boron;
uniformly mixing the particle constituents in a binder.
14 . The method of claim 13 , wherein the Boron particle constituents correspond to one or more of Boron-nitride polymers, Boron nanotubes, and/or Boron nanoparticles.
15 . The method of claim 14 , further comprising adjusting an electrical characteristic of the VSD material by doping the Boron particle constituents with carbon.
16 . A composition comprising:
a binder;
multiple types of particle constituents, including a concentration of conductor and/or semiconductor particle constituents, and a concentration of particles that include Boron; and
wherein said composition is (i) dielectric in absence of a voltage that exceeds a characteristic voltage level, and (ii) conductive with application of a voltage that exceeds a characteristic voltage level of the composition.
17 . The composition of claim 16 , wherein the binder is a polymer.
18 . The composition of claim 16 , wherein the multiple types of particle constituents are mixed so that the composition is non-layered.
19 . The composition of claim 16 , wherein the concentration of particles that include Boron include nano-dimensioned Boron particles.
20 . The composition of claim 13 , wherein the concentration of particles that include Boron-nitride.
21 . The composition of claim 13 , wherein the particle constituents exceed a percolation threshold of the composition.
22 . The composition of claim 13 , wherein the multiple types of particle constituents include a concentration of varistor particles.
23 . The composition of claim 13 , wherein the concentration of particles that include Boron further include Boron-nitride polymers.
24 . The composition of claim 13 , wherein the concentration of particles that include Boron further include Boron-nitride nanotubes.