Semiconductor device having projecting electrode formed by electrolytic plating, and manufacturing method thereof
View Patent ↗A semiconductor device includes a semiconductor substrate, and a plurality of wiring lines provided on one side of the semiconductor substrate, each of the wiring lines having a connection pad portion. An overcoat film is provided on the wiring lines and the one side of the semiconductor substrate. The overcoat film has a plurality of openings in parts corresponding to the connection pad portions of the wiring lines. A plurality of foundation metal layers are respectively provided on inner surfaces of the openings of the overcoat film and electrically connected to the pat portions of the wiring lines. A plurality of projecting electrodes are respectively provided on the foundation metal layers in the openings of the overcoat film.
1. A semiconductor device manufacturing method comprising:
forming a plurality of wiring lines on one side of a semiconductor substrate;
forming, on the wiring lines and said one side of the semiconductor substrate, an overcoat film having openings in parts respectively corresponding to connection pad portions of the wiring lines;
forming foundation metal layers each having an edge part, on inner surfaces of the openings of the overcoat film, on parts of the wiring lines in the openings, and on the overcoat film around the openings, the edge parts being located on the overcoat film around the openings;
forming, by electrolytic plating, projecting electrodes on the foundation metal layers in the openings of the overcoat film and on the edge parts of the foundation metal lavers, each of the projecting electrodes including a lower projecting electrode portion and an upper projecting electrode portion that has an edge part formed on the edge part of one of the foundation metal lavers, wherein the upper projecting electrode portion is formed on the lower projecting electrode portion and on the edge part; and
forming solder balls, such that solder balls cover upper surfaces of the upper projecting electrode portions and side surfaces of the edge parts of the foundation metal lavers.
2. The semiconductor device manufacturing method according to claim 1 , wherein forming the foundation metal layers includes:
forming a foundation-metal-lavers-forming layer on the overcoat film; and
etching the foundation-metal-layers-forming layer on the overcoat film using the upper projecting electrode portions as etching masks to form the edge parts of the foundation metal lavers under the edge parts of the upper projecting electrode portions.
3. The semiconductor device manufacturing method according to claim 1 , wherein the upper projecting electrode portions have parts that are formed on the foundation metal layers in the openings of the overcoat film.
4. The semiconductor device manufacturing method according to claim 1 , wherein the projecting electrodes are formed after a plating resist film having openings larger than the openings of the overcoat film is formed on an upper surface of the foundation metal layer, wherein the openings of the plating resist film are respectively aligned with the openings of the overcoat film.
5. The semiconductor device manufacturing method according to claim 4 , wherein forming the solder balls comprises forming a solder layer on the upper surface of the upper projecting electrode portion of each of the projecting electrodes, in the openings of the plating resist film, and then removing the plating resist film from the upper surface of the foundation metal layer.
6. The semiconductor device manufacturing method according to claim 5 wherein the solder layer is formed by electrolytic plating on the upper surface of the upper projecting electrode portion of each of the projecting electrodes.
7. The semiconductor device manufacturing method according to claim 6 , wherein forming the solder balls further comprises forming, by reflow, solder balls made of the solder layers on the upper surfaces of the upper projecting electrode portions of the projecting electrodes after forming each of the solder layers.