Semiconductor device and manufacturing method thereof
A semiconductor device and its manufacturing method are offered to increase the number of semiconductor devices obtained from a semiconductor wafer while simplifying a manufacturing process. After forming a plurality of pad electrodes in a predetermined region on a top surface of a semiconductor substrate, a supporter is bonded to the top surface of the semiconductor substrate through an adhesive layer. Next, an opening is formed in the semiconductor substrate in a region overlapping the predetermined region. A wiring layer electrically connected with each of the pad electrodes is formed in the opening. After that, a stacked layer structure including the semiconductor substrate and the supporter is cut by dicing along a dicing line that is outside the opening.
1. A semiconductor device comprising:
a separated semiconductor die having an opening formed therein, the opening not being separated into two or more openings;
a supporter bonded to a top surface of the separated semiconductor die so as to cover the opening;
an adhesive layer boding the supporter to the top surface of the separated semiconductor die;
a plurality of pad electrodes disposed in the opening so as to be on the supporter; and
a plurality of wiring layers electrically connected to corresponding pad electrodes in the opening.
2. The semiconductor device of claim 1 , wherein the opening is disposed around a center of the separated semiconductor die.
3. The semiconductor device of claim 1 , wherein the separated semiconductor die has a rectangular shape.
4. The semiconductor device of claim 1 , wherein the opening has four corners in plan view of the semiconductor device, and four pad electrodes are in the opening so that a pad electrodes is disposed adjacent each corner.
5. A semiconductor device comprising:
a separated semiconductor die having an opening formed therein; the opening not being separated into two or more openings;
an insulation film disposed on the separated semiconductor die so as to cover the opening;
a plurality of pad electrodes disposed in the opening so as to be disposed on the insulation film; and
a plurality of wiring layers electrically connected to corresponding pad electrodes in the opening.
6. The semiconductor device of claim 5 , wherein the opening is disposed around a center of the separated semiconductor die.
7. A method of manufacturing a semiconductor device comprising:
providing a semiconductor substrate;
forming a plurality of pad electrodes in a predetermined region of the semiconductor substrate on a top surface of the semiconductor substrate;
bonding a supporter to the top surface of the semiconductor substrate using an adhesive;
forming an opening in the semiconductor substrate at the predetermined region so as to penetrate through the semiconductor substrate;
forming a plurality of wiring layers on a bottom surface of the semiconductor substrate so that the wiring layers are electrically connected to corresponding pad electrodes in the opening; and
dicing a stacked layer structure comprising the semiconductor substrate and the supporter along a dicing line to produce a semiconductor device, wherein, after the dicing has been completed to produce the semiconductor device, the entire opening remains in the produced semiconductor device without being cut.
8. The method of claim 7 , wherein the predetermined region and the opening are formed around a center of the semiconductor substrate.
9. The method of claim 7 , further comprising forming an insulation film to cover the semiconductor substrate and the pad electrodes and removing the supporter after the dicing.
10. The method of claim 7 , wherein the opening is defined by a closed boundary in plan view of the semiconductor die.
11. The method of claim 9 , wherein the predetermined region and the opening are formed around a center of the semiconductor substrate.
12. A semiconductor device comprising:
a separated semiconductor die having a front surface and a back surface and having an opening penetrating through the separated semiconductor die, the opening not being separated into two or more openings;
an insulating body disposed on the front surface of the separated semiconductor die and covering the opening of the separated semiconductor die;
a plurality of pad electrodes disposed in the opening of the semiconductor die so as to be on the insulating body; and
a plurality of wiring layers electrically connected to corresponding pad electrodes and disposed on the back surface of the separated semiconductor die,
wherein, in plan view of the semiconductor device, the wiring layers extend radially from the opening of the separated semiconductor die toward corresponding edges of the separated semiconductor die.