Amplifier device
View Patent ↗Provided is an amplifier device including a J-FET, a bipolar transistor, a first resistor and a second resistor. The amplifier device has a configuration in which a gate of the J-FET is connected to one end of an ECM and one end of the first resistor, a drain of the J-FET is connected to an input terminal of the bipolar transistor, a high-potential side of the bipolar transistor is connected to one end of a load resistor, the other end of the first resistor is grounded, a source of the J-FET and a low-potential side of the bipolar transistor are connected to one end of the second resistor, the other end of the second resistor is grounded, and an output voltage is drawn from the high-potential side of the bipolar transistor.
1. An amplifier device connected between an electret condenser microphone and a load resistor, the amplifier device comprising:
a junction field effect transistor comprising a gate, a source and a drain;
a bipolar transistor comprising a base, a high-potential side terminal and a low-potential side terminal;
a first resistor comprising a first terminal and a second terminal; and
a second resistor comprising a third terminal and a fourth terminal,
wherein the gate is connected to a terminal of the electret condenser microphone and the first terminal, the drain is connected to the base, the high-potential side terminal is connected to a terminal of the load resistor, the second terminal is grounded, the source and the low-potential side terminal are connected to the third terminal, the fourth terminal is grounded, and an output voltage is drawn between the high-potential side terminal and the terminal of the load resistor.
2. The amplifier device of claim 1 , wherein the bipolar transistor comprises a pnp transistor.
3. The amplifier device of claim 1 , wherein the bipolar transistor comprises a pnp transistor and an npn transistor connected to each other by Darlington connection, a base of the pnp transistor is connected to the drain, an emitter of the pnp transistor and a collector of the npn transistor are connected to the terminal of the load resistor, a collector of the pnp transistor is connected to a base of the npn transistor, and an emitter of the npn transistor is connected to the third terminal.
4. The amplifier device of claim 2 , further comprising a third resistor connected between the high-potential side terminal and the drain.
5. The amplifier device of claim 3 , further comprising a third resistor connected between the high-potential side terminal and the drain.
6. The amplifier of claim 1 , wherein the bipolar transistor is an npn transistor, and a third resistor is connected between the high-potential side terminal and the drain.
7. The amplifier device of claim 6 , further comprising a fourth resistor connected between the source and the third terminal.
8. The amplifier device of claim 7 , further comprising a fifth resistor connected between the low-potential side terminal and the third terminal.
9. The amplifier device of claim 1 , further comprising a first additional resistor connected between the source and the third terminal and a second additional resistor connected between the low-potential side terminal and the third terminal.
10. The amplifier device of claim 1 , further comprising a diode comprising a cathode connected to the gate and an anode that is grounded.
11. The amplifier device of claim 1 , wherein the high-potential side terminal is an emitter of the bipolar transistor and the low-potential side terminal is a collector of the bipolar transistor.