Mask for multi-column electron beam exposure, and electron beam exposure apparatus and exposure method using the same

1. A mask for for use in a multi-column electron beam exposure apparatus having a plurality of column cells, comprising:

stencil pattern groups each being constituted by a plurality of stencil patterns, the stencil pattern groups respectively being provided for the plurality of column cells; and

a single mask substrate mounted on a mask stage for moving the mask for exposure,

wherein the stencil pattern groups are arranged at intervals corresponding to arrangement intervals of the plurality of column cells, and

wherein all of the stencil pattern groups are mounted on the single mask substrate.

2. The mask for use in a multi-column electron beam exposure apparatus according to claim 1 , wherein the stencil pattern groups include:

first stencil pattern groups each being formed within a deflectable range of an electron beam of each of the plurality of column cells; and

a second stencil pattern group having two or more of the first stencil pattern groups, the second stencil pattern group being formed within a deflectable range of the electron beam of each of the plurality of column cells and within a movable range of the mask stage.

3. The mask for use in a multi-column electron beam exposure apparatus according to claim 2 , wherein the stencil pattern groups are the same among the plurality of column cells.

4. A multi-column electron beam exposure apparatus using a mask for multi-column electron beam exposure according to claim 2 , comprising:

a two-dimensionally movable mask stage provided to be shared by all the column cells, wherein

the single mask substrate is mounted on the two-dimensionally movable mask stage, and

a movable distance of the two-dimensionally movable mask stage is equal to a width of the second stencil pattern group formed on the single mask substrate.

5. The multi-column electron beam exposure apparatus according to claim 4 , further comprising:

a wafer stage for mounting a sample wafer including a reference mark for correction;

a backscattered electron detector; and

a mask mounting controller for mounting a single mask substrate onto the two-dimensionally movable mask stage, wherein

a stencil pattern formed on the single mask substrate is selected,

a pattern formed by an electron beam into a shape of the stencil pattern, is irradiated onto the sample wafer with a position of the reference mark as a target,

a position in which the pattern has been actually drawn is determined from an SEM image of the pattern, the SEM image being obtained based on a backscattered electron detected by the backscattered electron detector, and

a mounting position of the single mask substrate is adjusted by the mask mounting controller when a displacement is detected between the position of the reference mark and the position of the actually drawn pattern.

6. A multi-column electron beam exposure method using the multi-column electron beam exposure apparatus according to claim 5 , comprising the following steps of:

selecting stencil patterns located at equivalent positions in the column cells respectively by use of respective electron beams on optical axes in the column cells;

measuring a displacement between a position of the stencil pattern and a position irradiated with the electron beam in each of the column cells;

adjusting an mounting angle of the single mask substrate so as to minimize the displacement measured for said each of the column cells; and

exposing a sample wafer by using the single mask substrate of which the mounting angle has been adjusted.

7. A mask for for use in a multi-column electron beam exposure apparatus having a plurality of column cells, comprising:

stencil pattern groups each being constituted by a plurality of stencil patterns, the stencil pattern groups being respectively provided for the plurality of column cells; and

unified substrates in each of which the stencil pattern groups belonging to at least one of the plurality of column cells is formed,

wherein the unified substrates are mounted on a single pedestal substrate at intervals corresponding to arrangement intervals of the plurality of column cells, and

wherein the single pedestal substrate is mounted on a mask stage for moving the mask for exposure.

8. The mask for use in a multi-column electron beam exposure apparatus according to claim 7 , wherein the stencil pattern groups are constituted by:

a first stencil pattern group formed in a deflectable range of an electron beam, and

a second stencil pattern group having the first stencil pattern group two-dimensionally arranged.

9. The mask for use in a multi-column electron beam exposure apparatus according to claim 8 , wherein the stencil pattern groups are the same among the plurality of column cells.

10. The mask for use in a multi-column electron beam exposure apparatus according to claim 8 , wherein the unified substrates are detachable from the single pedestal substrate.

11. A multi-column electron beam exposure apparatus using the mask according to claim 10 , comprising a two-dimensionally movable mask stage provided to be shared by the plurality of column cells, wherein

the single pedestal substrate is mounted on the two-dimensionally movable mask stage, and

a movable distance of the two-dimensionally movable mask stage is equal to a width of the second stencil pattern group mounted on the single pedestal substrate and formed on the unified substrates.

12. The multi-column electron beam exposure apparatus according to claim 11 , further comprising:

a wafer stage for mounting a sample wafer including a reference mark for correction;

a backscattered electron detector; and

a mask mounting controller for mounting the single pedestal substrate onto the two-dimensionally movable mask stage, wherein

a stencil pattern formed on the single pedestal substrate is selected,

a pattern, formed by an electron beam into a shape of the stencil pattern, is irradiated onto the sample wafer with a position of the reference mark as a target,

a position in which the pattern has been actually drawn is determined from an SEM image of the pattern, the SEM image being obtained based on a backscattered electron detected by the backscattered electron detector, and

a mounting position of the single pedestal substrate is adjusted by the mask mounting controller when a displacement is detected between the position of the reference mark and the position of the actually drawn pattern.

13. A multi-column electron beam exposure method using the multi-column electron beam exposure apparatus according to claim 12 , comprising the following steps of:

selecting a stencil pattern at an equivalent position among the plurality of column cells by use of an electron beam on an optical axis in each of the plurality of column cells;

measuring a displacement between a position of the selected stencil pattern and a position irradiated with the electron beam in said each of the plurality of column cells;

adjusting an mounting angle of the single pedestal substrate so as to minimize the displacement measured for said each of the plurality of column cells; and

exposing a sample wafer by using the single pedestal substrate of which the mounting angle has been adjusted.