Immersion exposure device cleaning method, dummy wafer, and immersion exposure device

1 . A method for cleaning an immersion exposure device, comprising:

placing a dummy wafer onto a stage of the immersion exposure device; and

moving said stage while maintaining an immersion solution between said dummy wafer and a projector lens,

said dummy wafer including a substrate and an adsorption area that is formed on said substrate and has higher adsorption power for particles suspended in said supplied immersion solution than said substrate has for the particles.

2 . The method according to claim 1 , wherein said adsorption area has a contact angle with water of 15° or more and 100° or less.

3 . The method according to claim 2 , wherein said adsorption area has a contact angle with water of 60° or more and 80° or less.

4 . The method according to claim 1 , wherein said adsorption area is formed with a silicon nitride film, a silicon carbonitride film, a silicon carbide film, or a carbon film.

5 . The method according to claim 4 , wherein a surface of said adsorption area is subjected to a plasma treatment.

6 . The method according to claim 4 , wherein said substrate is a silicon substrate.

7 . The method according to claim 1 , wherein said dummy wafer has a plurality of kinds of said adsorption areas.

8 . A dummy wafer to be used in the method according to claim 1 .

9 . An immersion exposure device comprising:

a dummy wafer;

a projector lens that is located above said dummy wafer;

a stage on which said dummy wafer is placed;

an immersion solution supply unit that supplies an immersion solution between said dummy wafer placed on said stage and said projector lens; and

a control unit that moves said stage relative to said projector lens,

said dummy wafer including a substrate and an adsorption area that is formed on said substrate and has higher adsorption power for particles suspended in said supplied immersion solution than said substrate has for the particles.