Method for producing trichlorosilane
In the apparatus for producing trichlorosilane in which metal silicon powder supplied into the reactor is reacted with hydrogen chloride gas while being fluidized by the gas, thereby taking out trichlorosilane generated by the reaction from the upper part of the reactor, and a plurality of gas flow controlling members are installed at the internal space of the reactor along the vertical direction.
1. A method for producing trichlorosilane comprising:
providing a reactor and a plurality of gas flow controlling members disposed along the vertical direction in an internal space of the reactor and arranged in close proximity to each other in order to suppress growth of gas bubbles and break gas bubbles into smaller bubbles;
supplying metal silicon powder as a raw material to the reactor;
introducing hydrogen chloride gas to the reactor from therebelow so that the hydrogen chloride gas flows upward along the gas flow controlling members;
fluidizing the metal silicon powder by the flow of the hydrogen chloride gas and reacting the metal silicon powder with the hydrogen chloride gas to generate trichlorosilane gas; and
taking out gas containing the trichlorosilane from an upper part of the reactor.
2. The method according to claim 1 , further comprising the step of agitating the metal silicon powder and the hydrogen chloride gas after introducing hydrogen chloride gas to the reactor.
3. The method according to claim 1 , further comprising providing the reactor with a large diameter portion disposed at an upper part of the reactor, having an inner diameter, to decrease a speed of an upward flow of hydrogen chloride gas and metal silicon powder.
4. The method according to claim 3 , wherein an inner diameter of the large diameter portion is in a range of 1.3 to 1.6 times with respect to the inner diameter of a lower part of the reactor.
5. The method according to claim 1 , further comprising providing a heat transfer tube to the reactor.
6. The method according to claim 5 , wherein each of the gas flow controlling members is formed so as to be shorter than the heat transfer tube.
7. The method according to claim 6 , wherein a lower end of each of the gas flow controlling members is installed to be equal in height to a lower end of the heat transfer tube.
8. The method according to claim 6 , wherein an upper end of each of the gas flow controlling member is arranged below an upper end of the heat transfer tube.
9. The method according to claim 1 , further comprising providing a jacket structure into which a heating medium may be flowed.
10. The method according to claim 1 , wherein a supply quantity of the metal silicon powder is adjusted by controlling a flow rate of the hydrogen chloride gas.