A polishing pad capable of maintaining a high level of dimensional stability upon moisture absorption or water absorption and providing high polishing rate includes a polishing layer of a polyurethane foam having fine cells, wherein the polyurethane foam includes a cured product of a reaction of (1) an isocyanate-terminated prepolymer (A) that includes an isocyanate monomer, a high molecular weight polyol (a), and a low molecular weight polyol, (2) an isocyanate-terminated prepolymer (B) that includes a polymerized diisocyanate and a polyethylene glycol with a number average molecular weight of 200 to 1,000, and (3) a chain extender.
1. A polishing pad, comprising a polishing layer comprising a polyurethane foam having fine cells, wherein the polyurethane foam is a cured product of a reaction of
(1) an isocyanate-terminated prepolymer (A) that includes an isocyanate monomer, a high molecular weight polyol (a), and a low molecular weight polyol,
(2) an isocyanate-terminated prepolymer (B) that includes a polymerized diisocyanate and a polyethylene glycol with a number average molecular weight of 250-650, and
(3) a chain extender,
wherein the high molecular weight polyol (a) is a polyether polyol with a number average molecular weight of 1000 to 2000, and the isocyanate monomer is toluene diisocyanate or dicyclohexylmethane diisocyanate,
the low molecular weight polyol has a molecular weight lower than the high molecular weight polyol (a), and
the polyurethane foam has a dimensional change rate of 0.8% or less and a bending elastic modulus change rate of 40% or less when absorbing water.
2. The polishing pad according to claim 1 , wherein the polymerized diisocyanate is a polymerized hexamethylene diisocyanate having an isocyanurate structure or a polymerized hexamethylene diisocyanate having a biuret structure.
3. The polishing pad according to claim 1 , wherein the isocyanate-terminated prepolymer (B) is added in an amount of 5 to 30 parts by weight, based on 100 parts by weight of the isocyanate-terminated prepolymer (A).
4. The polishing pad according to claim 1 , wherein the polyurethane foam has an average cell diameter of 20 μm to 70 μm and a cut rate of 2 μm/minute or less.
5. The polishing pad according to claim 1 , wherein the polyurethane foam contains 0.05 to 10% by weight of a silicone surfactant.
6. A method for manufacturing a semiconductor device, comprising polishing a surface of a semiconductor wafer using the polishing pad according to claim 1 .
7. The polishing pad according to claim 1 , wherein the chain extender is 4,4′-methylenebis(o-chloroaniline).
8. The polishing pad according to claim 1 , wherein the low molecular weight polyol includes ethylene glycol, 1,2-propylene glycol, 1,3-propylene glycol, 1,2-butanediol, 1,3-butanediol, 1,4-butanediol, 2,3-butanediol, 1,6-hexanediol, neopentyl glycol, 1,4-cyclohexanedimethanol, 3-methyl-1,5-pentanediol, diethylene glycol, triethylene glycol, 1,4-bis(2-hydroxyethoxy)benzene, trimethylolpropane, glycerin, 1,2,6-hexanetriol, pentaerythritol, tetramethylolcyclohexane, methylgucoside, sorbitol, mannitol, dulcitol, sucrose, 2,2,6,6-tetrakis(hydroxymethyl)cyclohexanol, diethanolamine, N-methyldiethanolamine, or triethanolamine.