Metal Deposition
Systems and methods include depositing one or more materials on a voltage switchable dielectric material. In certain aspects, a voltage switchable dielectric material is disposed on a conductive backplane. In some embodiments, a voltage switchable dielectric material includes regions having different characteristic voltages associated with deposition thereon. Some embodiments include masking, and may include the use of a removable contact mask. Certain embodiments include electrografting. Some embodiments include an intermediate layer disposed between two layers.
1 . A method for fabricating a current-carrying formation, the method comprising:
providing a substrate having a voltage switchable dielectric material on at least a portion of the substrate;
depositing an electrically conductive material on at least a portion of the voltage switchable dielectric material; and
attaching a package to at least a portion of at least one of the voltage switchable dielectric material and the deposited electrically conductive material.
2 . The method of claim 1 , further comprising removing the substrate from the attached voltage switchable dielectric material.
3 . The method of claim 2 , wherein removing includes dissolving the substrate.
4 . The method of claim 2 , wherein removing includes melting the substrate.
5 . The method of claim 1 , wherein providing includes providing a substrate with a decohesion layer between the portion and the voltage switchable dielectric material.
6 . The method of claim 5 , further comprising removing the substrate using the decohesion layer.
7 . The method of claim 1 , wherein attaching includes encasing the portion in a polymer.
8 . The method of claim 7 , wherein the polymer includes any of a polyurethane, a PEEK, a novolac, and an epoxy.
9 . The method of claim 1 , wherein the package includes a composite material.
10 . The method of claim 9 , wherein the composite material includes a fiberglass composite.
11 . The method of claim 1 , wherein any of the package and the voltage switchable dielectric material includes a via.
12 . The method of claim 11 wherein depositing includes depositing the electrically conductive material in the via.
13 . The method of claim 1 , further comprising forming an intermediate layer on at least a portion of the voltage switchable dielectric material before depositing the electrically conductive material, and the electrically conductive material is deposited on the portion having the intermediate layer.
14 . The method of claim 13 , wherein the intermediate layer includes a diffusion barrier.
15 . The method of claim 1 , wherein providing includes providing a substrate having a conductive backplane beneath the voltage switchable dielectric material.
16 . The method of claim 1 , wherein depositing includes creating a voltage between 0.1 and 400 volts.
17 . The method of claim 1 , wherein depositing includes using a cycling voltage.
18 . The method of claim 1 , wherein depositing includes partially etching the electrically conductive material.
19 . A structure comprising:
a dielectric substrate having a surface;
a voltage switchable dielectric material disposed on at least a portion of the surface;
an electrically conductive material deposited on at least a portion of the voltage switchable dielectric material; and
a package attached to at least one of the voltage switchable dielectric material and the deposited electrically conductive material.
20 . The structure of claim 19 , further comprising an intermediate layer disposed between the voltage switchable dielectric material and the deposited electrically conductive material.
21 . A structure comprising:
a voltage switchable dielectric material;
an electrically conductive material deposited on the voltage switchable dielectric material; and
a package attached to at least a portion of any of the voltage switchable dielectric material and the electrically conductive material.