Metal Deposition
Systems and methods include depositing one or more materials on a voltage switchable dielectric material. In certain aspects, a voltage switchable dielectric material is disposed on a conductive backplane. In some embodiments, a voltage switchable dielectric material includes regions having different characteristic voltages associated with deposition thereon. Some embodiments include masking, and may include the use of a removable contact mask. Certain embodiments include electrografting. Some embodiments include an intermediate layer disposed between two layers.
1 . A method for fabricating a current-carrying formation, the method comprising:
providing a voltage switchable dielectric material;
depositing an intermediate layer on at least a portion of the voltage switchable dielectric material; and
depositing an electrically conductive material on at least a portion of the intermediate layer.
2 . The method of claim 1 , wherein the intermediate layer includes a diffusion barrier that reduces diffusion of one or more species between the voltage switchable dielectric material and the electrically conductive material.
3 . The method of claim 1 , wherein the intermediate layer includes any of W, Ti, Ta, Ru, Re, and Mo.
4 . The method of claim 1 , wherein the intermediate layer includes any of a silicide, oxide, nitride and carbide.
5 . The method of claim 1 , wherein the intermediate layer includes a conductive polymer.
6 . The method of claim 5 , wherein the conductive polymer includes any of a polythiophene and a polyaniline.
7 . The method of claim 1 , wherein depositing the intermediate layer includes electrografting the intermediate layer.
8 . The method of claim 1 , wherein the intermediate layer includes a seed layer that enhances the deposition of the electrically conductive material.
9 . The method of claim 8 , wherein the seed layer includes one or more components of the intermediate layer.
10 . The method of claim 8 , wherein the seed layer includes an electrically conductive material.
11 . The method of claim 8 , wherein the seed layer includes a metal.
12 . A method of fabricating a multilayer structure, the method comprising:
providing a voltage switchable dielectric material;
immersing the voltage switchable dielectric material in a solution comprising a polymer precursor;
subjecting the immersed voltage switchable dielectric material to a voltage sufficient to cause electrodeposition of a first polymer from the solution; and
depositing the first polymer onto the immersed voltage switchable dielectric material.
13 . The method of claim 12 , further comprising applying a second polymer to the first polymer.
14 . The method of claim 12 , wherein depositing includes electroplating.
15 . The method of claim 12 , wherein depositing includes electrografting.
16 . The method of claim 12 , wherein depositing includes using a cyclic voltage.
17 . The method of claim 12 , wherein depositing includes partially etching.
18 . A current-carrying formation comprising:
a voltage switchable dielectric material;
an intermediate layer deposited on at least a portion of the voltage switchable dielectric material; and
an electrical conductor deposited on at least a portion of the intermediate layer.
19 . The current-carrying formation of claim 18 , wherein the electrical conductor includes any of Cu, Ti, Al, Ag, Au, and Pt.
20 . The current-carrying formation of claim 18 , wherein the voltage switchable dielectric material includes a characteristic voltage between 3 and 100 volts.
21 . The current-carrying formation of claim 18 , wherein the intermediate layer includes an electrografted polymer.
22 . The current-carrying formation of claim 21 , wherein the electrical conductor includes a conductive polymer.
23 . The current-carrying formation of claim 18 , wherein the intermediate layer includes any of W, Ti, Ta, Ru, Re, and Mo.
24 . The current-carrying formation of claim 18 , wherein the intermediate layer includes any of a silicide, oxide, nitride and carbide.
25 . The current-carrying formation of claim 18 , wherein the intermediate layer includes a diffusion barrier.
26 . The current-carrying formation of claim 18 , wherein the electrical conductor includes a conductive polymer.
27 . A multilayer structure comprising:
a voltage switchable dielectric material;
an intermediate layer deposited on at least a portion of the voltage switchable dielectric material; and
a polymer deposited on at least a portion of the intermediate layer.
28 . The multilayer structure of claim 27 , wherein the intermediate layer includes an electrografted polymer.
29 . The multilayer structure of claim 27 , wherein the intermediate layer includes a diffusion barrier.