Metal Deposition
Systems and methods include depositing one or more materials on a voltage switchable dielectric material. In certain aspects, a voltage switchable dielectric material is disposed on a conductive backplane. In some embodiments, a voltage switchable dielectric material includes regions having different characteristic voltages associated with deposition thereon. Some embodiments include masking, and may include the use of a removable contact mask. Certain embodiments include electrografting. Some embodiments include an intermediate layer disposed between two layers.
1 . A method for fabricating a current-carrying formation, the method comprising:
providing a voltage switchable dielectric material having a characteristic voltage;
applying a contact mask to a surface of the voltage switchable dielectric material, the contact mask including:
an insulating foot that contacts the surface and defines a portion of the surface for deposition, and
an electrode, separated from the surface by the foot;
immersing the voltage switchable dielectric material and applied contact mask in a solution that provides a source of ions associated with an electrical conductor to the defined portion; and
depositing the electrical conductor onto the defined portion of the surface of the voltage switchable dielectric material.
2 . The method of claim 1 , wherein depositing includes creating a voltage between the electrode and the voltage switchable dielectric material that is greater than the characteristic voltage.
3 . The method of claim 2 , wherein the voltage includes a cyclic voltage.
4 . The method of claim 2 , wherein the voltage includes a voltage between 2 and 200 volts.
5 . The method of claim 1 , wherein the voltage switchable dielectric material includes a via, and depositing includes depositing in the via.
6 . The method of claim 1 , wherein depositing includes electroplating.
7 . The method of claim 1 , wherein the insulating foot includes a polymer.
8 . The method of claim 1 , wherein the insulating foot includes a photoresist.
9 . The method of claim 1 , wherein the electrode is separated from the surface by a distance of less than 2 cm.
10 . The method of claim 9 , wherein the electrode is separated from the surface by a distance of less than 2 mm.
11 . The method of claim 1 , wherein providing includes providing the voltage switchable dielectric material on a conductive backplane.
12 . The method of claim 1 , wherein providing includes providing the voltage switchable dielectric material with an intermediate layer disposed on the surface.
13 . A method for fabricating a current-carrying formation, the method comprising:
providing an electrically conductive material on a voltage switchable dielectric material having a characteristic voltage;
applying a contact mask to a surface of the electrically conductive material, the contact mask including:
an insulating foot that contacts the surface and defines a portion of the surface for etching, and
an electrode, separated from the surface by the foot;
immersing the voltage switchable dielectric material, deposited electrically conductive material and applied contact mask in an electrochemical etching solution; and
etching the electrically conductive material from the defined portion of the surface.
14 . The method of claim 13 , wherein etching includes creating a voltage between the electrode and the voltage switchable dielectric material that is greater than the characteristic voltage.
15 . The method of claim 14 , wherein the electrochemical etching solution does not etch the conductive material when the voltage is less than the characteristic voltage.
16 . The method of claim 13 , wherein the electrically conductive material includes a metal.
17 . The method of claim 13 , wherein the insulating foot includes a polymer.
18 . The method of claim 13 , wherein the electrically conductive material includes any of Cu, Ti, Ta, Au, and Ag.
19 . The method of claim 13 , wherein the electrode is separated from the surface by a distance of less than 2 cm.
20 . The method of claim 19 , wherein the electrode is separated from the surface by a distance of less than 1 mm.
21 . The method of claim 14 , wherein creating the voltage includes creating a cyclic voltage.
22 . The method of claim 14 , wherein the voltage is between 1 and 300 volts.
23 . The method of claim 13 , wherein providing includes providing the voltage switchable dielectric material on a conductive backplane.
24 . The method of claim 13 , wherein providing includes providing the voltage switchable dielectric material with an intermediate layer disposed on at least a portion of the surface.
25 . A current-carrying formation fabricated using a method comprising:
providing a voltage switchable dielectric material having a characteristic voltage;
applying a contact mask to a surface of the voltage switchable dielectric material, the contact mask including:
an insulating foot that contacts the surface and defines a portion of the surface for deposition, and
an electrode, separated from the surface by the foot;
immersing the voltage switchable dielectric material and applied contact mask in a solution that provides a source of ions associated with an electrical conductor to the defined portion; and
depositing the electrical conductor onto the defined portion of the surface of the voltage switchable dielectric material.
26 . A current-carrying formation fabricated using a method comprising:
providing an electrically conductive material on a voltage switchable dielectric material having a characteristic voltage;
applying a contact mask to a surface of the electrically conductive material, the contact mask including:
an insulating foot that contacts the surface and defines a portion of the surface for etching, and
an electrode, separated from the surface by the foot;
immersing the voltage switchable dielectric material, deposited electrically conductive material and applied contact mask in an electrochemical etching solution; and
etching the electrically conductive material from the defined portion of the surface.