Metal Deposition
Systems and methods include depositing one or more materials on a voltage switchable dielectric material. In certain aspects, a voltage switchable dielectric material is disposed on a conductive backplane. In some embodiments, a voltage switchable dielectric material includes regions having different characteristic voltages associated with deposition thereon. Some embodiments include masking, and may include the use of a removable contact mask. Certain embodiments include electrografting. Some embodiments include an intermediate layer disposed between two layers.
1 . A method for fabricating a current-carrying formation, the method comprising:
providing a layer of a voltage switchable dielectric material, the layer including a first region having a first characteristic voltage and a second region having a second characteristic voltage greater than the first characteristic voltage;
exposing the voltage switchable dielectric material to a source of ions associated with an electrical conductor;
creating a first voltage between the layer and the source of ions, the first voltage greater than the first characteristic voltage and less than the second characteristic voltage; and
depositing the electrical conductor on the first region.
2 . The method of claim 1 , wherein the layer is provided on a conductive backplane.
3 . The method of claim 1 wherein the voltage switchable dielectric material in the first region has a first thickness and the voltage switchable dielectric material in the second region has a second thickness.
4 . The method of claim 1 , wherein the electrical conductor is not deposited on the second region under the first voltage.
5 . The method of claim 1 , wherein any of the first and second regions includes two or more voltage switchable dielectric materials.
6 . The method of claim 1 , wherein the electrical conductor includes any of Cu, Al, Ti, Ag, Au, and Pt.
7 . The method of claim 1 , wherein depositing includes electroplating.
8 . The method of claim 1 , wherein the first voltage includes a cyclic voltage.
9 . The method of claim 1 , wherein the first voltage is between 2 and 50 volts.
10 . The method of claim 9 , wherein the first voltage is between 5 and 20 volts.
11 . The method of claim 1 , further comprising:
creating a second voltage between the layer and the source of ions, the second voltage greater than the first and second characteristic voltages; and
depositing the electrical conductor on the first and second regions.
12 . A method for fabricating a current-carrying formation, the method comprising:
providing a layer of a voltage switchable dielectric material, the layer including a first region having a first characteristic voltage and a second region having a second characteristic voltage greater than the first characteristic voltage;
exposing the voltage switchable dielectric material to a source of ions associated with an electrical conductor;
creating a first voltage between the layer and the source of ions, the first voltage greater than the first and second characteristic voltages; and
depositing the electrical conductor on the first and second regions.
13 . The method of claim 12 , further comprising etching the electrical conductor from the first region.
14 . The method of claim 13 , wherein the second region retains at least a portion of the electrical conductor after etching.
15 . The method of claim 12 , further comprising:
creating a second voltage between the layer and the source of ions, the second voltage greater than the first characteristic voltage and less than the second characteristic voltage, the second voltage having a polarity that induces an etching of the deposited electrical conductor; and
etching the electrical conductor from the first region.
16 . The method of claim 15 , wherein the second region retains at least a portion of the electrical conductor after etching.
17 . The method of claim 12 , wherein the layer is provided on a conductive backplane.
18 . The method of claim 12 wherein the voltage switchable dielectric material in the first region has a first thickness and the voltage switchable dielectric material in the second region has a second thickness.
19 . The method of claim 12 , wherein any of the first and second regions includes two or more voltage switchable dielectric materials.
20 . The method of claim 12 , wherein the electrical conductor includes any of Cu, Al, Ti, Ag, Au, and Pt.
21 . The method of claim 12 , wherein depositing includes electroplating.
22 . The method of claim 12 , wherein the first voltage includes a cyclic voltage.
23 . The method of claim 15 , wherein the second voltage includes a cyclic voltage.
24 . A structure comprising:
a conductive backplane;
a voltage switchable dielectric material disposed on the conductive backplane, the voltage switchable dielectric material having a first region with a first characteristic voltage and a second region with a second characteristic voltage; and
one or more conductors deposited on any of the first and second regions.