One-time programmable memory device and methods thereof
View Patent ↗A portion of a programmable memory device is configured as a one-time programmable (OTP) memory, where in response to a write access to the memory device, a memory controller determines whether the write access is associated with a memory location designated as an OTP memory location. If so, the memory controller performs a read of the memory location, and allows the write access only if each memory cell of the memory location is in an un-programmed state. Thus, only a single write access to an OTP memory location is permitted, and subsequent write attempts are disallowed. Further, to enhance detection of programmed cells, the read of the OTP memory location is performed with a lower read voltage than a read voltage associated with a write access to a non-OTP memory location, thereby improving detection of programmed memory cells in the OTP memory location.
1. A method comprising:
receiving a first address indicative of a first memory location of a programmable memory, the first memory location comprising a plurality of memory cells;
in response to determining the first address is associated with a one-time programmable (OTP) memory location, applying a first read voltage to a first memory cell of the plurality of memory cells to determine a first state of the first memory cell; and
in response to determining the first address is not associated with the OTP memory location, applying a second read voltage to the first memory cell to determine the first state of the first memory cell, the second read voltage different from the first read voltage.
2. The method of claim 1 , further comprising:
in response to determining the first address is associated with the OTP memory location and in response to determining the first state is indicative of an un-programmed state, applying a write voltage to the first memory cell to program the first memory cell.
3. The method of claim 2 , wherein the first address is received in response to a first write request, and further comprising:
in response to determining the first address is associated with the OTP memory location and in response to determining the first state is indicative of a programmed state, not performing the first write request.
4. The method of claim 2 , further comprising:
in response to applying the write voltage to the first memory cell, applying the second read voltage to the first memory cell to determine a second state of the first memory cell.
5. The method of claim 4 , further comprising:
in response to determining the second state is indicative of an un-programmed state:
applying the write voltage to the first memory cell;
applying the second read voltage to the first memory cell to determine a third state of the first memory cell.
6. The method of claim 1 , further comprising determining the first address whether the first address is associated with the OTP memory location based on whether the first address is in a first range of addresses.
7. The method of claim 1 , further comprising:
in response to determining the first address is associated with the OTP memory location, setting a status indicator to a first state.
8. The method of claim 7 , wherein receiving the first address comprises receiving the first address based on a first write access received at a first time, and further comprising:
receiving the first address based on a second write access received at a second time after the first time; and
in response to determining the first status indicator is in the second state, providing an indication that the second write access cannot be fulfilled.
9. The method of claim 1 , wherein the programmable memory comprises a flash memory.
10. A method, comprising:
receiving at a first time a first address indicative of a first memory location of a flash memory, the first memory location comprising a plurality of memory cells;
in response to receiving the first address at the first time, applying a first read voltage to a first memory cell of the plurality of memory cells to determine a first state of the first memory cell;
in response to determining the first state is indicative of a programmed state setting a first status indicator to a first status;
receiving a write request associated with the first memory location at a second time after the first;
in response to receiving the write request:
determining a status of the first status indicator;
in response to determining the status of the first status indicator is a second status:
applying a write voltage to the first memory cell to program the first memory cell;
applying a second read voltage to the first memory cell to determine a second state of the memory cell, the second read voltage different from the first.
11. The method of claim 10 , further comprising:
in response to determining the status of the first status indicator is the first status, not performing the write request.
12. The method of claim 10 , further comprising:
in response to receiving the first address at the first time, applying the first read voltage to a second memory cell of the plurality of memory cells to determine a second state of the second memory cell;
in response to determining the second state is indicative of a programmed state setting the first status indicator to the first status.
13. The method of claim 10 , further comprising in response to the write request:
in response to determining the first status indicator is a second status, setting the first status indicator to the first status.
14. The method of claim 10 , wherein applying the first read voltage to the first memory cell comprises applying the first read voltage to the memory cell in response to determining the first address is associated with a first region of the flash memory.
15. A device, comprising:
a programmable memory array comprising a memory location comprising a plurality of memory cells;
a memory controller coupled to the flash memory array and comprising an input to receive a first address, the memory controller operable to:
apply a first read voltage at each of the plurality of memory cells in response to receiving the first address at a first time to determine a corresponding state for each of the plurality of memory cells; and
in response to determining each of the plurality of memory cells is in an un-programmed state:
apply a write voltage at a first memory cell of the plurality of memory cells; and
apply a second read voltage at the each of the plurality of memory cells, the second read voltage different from the first.
16. The device of claim 15 , wherein the first address is associated with a first write access, and wherein the memory controller is operable to deny the first write access in response to determining that at least one of the plurality of memory cells is in a programmed state.
17. The device of claim 15 , wherein the memory controller is operable to apply the first read voltage in response to determining the first memory location is associated with a one-time programmable (OTP) memory location, and is further operable to:
in response to determining the first memory location is not associated with an OTP memory location, apply the second read voltage at each of the plurality of memory cells.
18. The device of claim 15 , further comprising:
a first status indicator coupled to the memory controller, the memory controller configured to set the first status indicator to a first status in response to receiving the first address at the first time.
19. The device of claim 18 , wherein the memory controller is further operable to:
in response to receiving the first address at a second time after the first time, provide an indication that a write access associated with the first address cannot be fulfilled.
20. The device of claim 15 , wherein the programmable memory array comprises a flash memory.