Semiconductor device with increased snapback voltage
View Patent ↗Methods and apparatus are provided for fabricating a semiconductor device structure. The semiconductor device structure comprises a buried region having a first conductivity type, a first region having a second conductivity type overlying the buried region, a source region having the first conductivity type overlying the first region, and a drain region having the first conductivity type overlying the first region. The semiconductor device structure further comprises a second region having the first conductivity type overlying the buried region, the second region abutting the buried region to form an electrical contact with the buried region, and a first resistance configured electrically in series with the second region and the buried region. The combined series resistance of the first resistance and the second region is greater than a resistance of the buried region.
1. A semiconductor device structure comprising:
a buried region of semiconductor material having a first conductivity type;
a first region of semiconductor material having a second conductivity type overlying the buried region;
a source region of semiconductor material having the first conductivity type overlying the first region;
a drain region of semiconductor material having the first conductivity type overlying the first region, wherein at least a portion of the first region is between the drain region and the source region;
a second region of semiconductor material having the first conductivity type overlying the buried region, the second region abutting the buried region to form an electrical contact with the buried region; and
a first resistance configured electrically in series with the second region and the buried region, wherein a combined series resistance of the first resistance and the second region is greater than a resistance of the buried region.
2. The semiconductor device structure of claim 1 , wherein a combined series resistance of the first resistance, the second region, and the buried region is greater than a resistance of the drain region.
3. The semiconductor device structure of claim 1 , wherein a combined series resistance of the first resistance, the second region, and the buried region is greater than an on-resistance between the drain region and the source region.
4. The semiconductor device structure of claim 3 , wherein the combined series resistance of the first resistance, the second region, and the buried region is within a range of about 100 ohms to 1 megohm.
5. The semiconductor device structure of claim 3 , wherein the combined series resistance of the first resistance, the second region, and the buried region is greater than the on-resistance by at least a factor of three.
6. The semiconductor device structure of claim 1 , wherein the first resistance comprises a resistive region of semiconductor material having the first conductivity type abutting the second region to form a second electrical contact with the second region.
7. The semiconductor device structure of claim 6 , the second region having a first dopant concentration and the resistive region having a second dopant concentration, wherein the first dopant concentration is greater than the second dopant concentration.
8. The semiconductor device structure of claim 6 , further comprising a contact region of semiconductor material having the first conductivity type abutting the resistive region of semiconductor material, wherein the resistive region of semiconductor material and the second region are configured electrically in series between the contact region and the buried region.
9. The semiconductor device structure of claim 1 , wherein the first resistance is configured electrically in series between the drain region and the second region.
10. The semiconductor device structure of claim 1 , wherein the first resistance is configured electrically in series between the source region and the second region.
11. A semiconductor device structure comprising:
a first region of semiconductor material having a first conductivity type;
a second region of semiconductor material having a second conductivity type overlying the first region;
a third region of semiconductor material having the first conductivity type, the third region overlying the first region and abutting the first region to form an electrical contact with the first region; and
a fourth region of semiconductor material having the first conductivity type, the fourth region abutting the third region to form an electrical contact with the third region, wherein:
the third region and the fourth region are configured to provide an isolation path for biasing the first region; and
the fourth region is configured to provide a resistance electrically in series with the third region and the first region, wherein a resistance of the fourth region is greater than a resistance of the first region.
12. The semiconductor device structure of claim 11 , wherein:
a dopant concentration of the third region is greater than a dopant concentration of the fourth region; and
a dopant concentration of the first region is greater than the dopant concentration of the fourth region.
13. The semiconductor device structure of claim 11 , further comprising a fifth region of semiconductor material having the first conductivity type, the fifth region overlying the second region, wherein:
the third region and the fourth region are electrically in series between the fifth region and the first region; and
the fifth region comprises a drain region or a source region for the semiconductor device structure.
14. The semiconductor device structure of claim 11 , further comprising a contact region of the first conductivity type formed in the fourth region, wherein the third region and the fourth region are electrically in series between the contact region and the first region.
15. The semiconductor device structure of claim 14 , further comprising a dielectric region overlying the third region and adjacent to the contact region to isolate the third region from the contact region.
16. The semiconductor device structure of claim 11 , wherein:
the first region of semiconductor material comprises a first N-type region of semiconductor material;
the second region of semiconductor material comprises a P-type region of semiconductor material overlying the first N-type region of semiconductor material;
the third region of semiconductor material comprises a second N-type region of semiconductor material overlying and abutting the first N-type region of semiconductor material; and
the fourth region of semiconductor material comprises a third N-type region of semiconductor material abutting the second N-type region of semiconductor material, wherein at least a portion of the P-type region of semiconductor material is interposed between the first N-type region of semiconductor material and the third N-type region of semiconductor material, such that the second N-type region of semiconductor material is configured electrically in series between the first N-type region of semiconductor material and the third N-type region of semiconductor material.
17. The semiconductor device structure of claim 11 , wherein:
the first region of semiconductor material comprises a first P-type region of semiconductor material;
the second region of semiconductor material comprises an N-type region of semiconductor material overlying the first N-type region of semiconductor material;
the third region of semiconductor material comprises a second P-type region of semiconductor material overlying and abutting the first P-type region of semiconductor material; and
the fourth region of semiconductor material comprises a third P-type region of semiconductor material abutting the second P-type region of semiconductor material, wherein at least a portion of the N-type region of semiconductor material is interposed between the first P-type region of semiconductor material and the third P-type region of semiconductor material, such that the second P-type region of semiconductor material is configured electrically in series between the first P-type region of semiconductor material and the third P-type region of semiconductor material.
18. A method for fabricating a transistor, the method comprising:
providing a semiconductor substrate having a first region of semiconductor material and a second region of semiconductor material formed thereon, wherein the first region has a first conductivity type and the second region has a second conductivity type, the second region overlying the first region;
forming a source region of semiconductor material having the first conductivity type within the second region;
forming a drain region of semiconductor material having the first conductivity type within the second region, wherein at least a portion of the second region is between the drain region and the source region;
forming an isolation tie region of semiconductor material in the second region of semiconductor material, the isolation tie region having the first conductivity type, wherein the isolation tie region overlies the first region and abuts the first region to form an electrical contact with the first region; and
providing a first resistance configured electrically in series with the isolation tie region and the first region, wherein a combined series resistance of the first resistance and the isolation tie region is greater than a resistance of the first region.
19. The method of claim 18 , wherein providing the first resistance comprises forming a resistive region of semiconductor material having the first conductivity type, the resistive region overlying at least a portion of the second region and abutting the isolation tie region to form a second electrical contact with the isolation tie region.
20. The method of claim 19 , wherein:
forming the isolation tie region of semiconductor material comprises implanting ions of a first conductivity-determining impurity type with a first dopant concentration into the isolation tie region of semiconductor material; and
forming the resistive region of semiconductor material comprises implanting ions of the first conductivity-determining impurity type with a second dopant concentration into the resistive region of semiconductor material, wherein the second dopant concentration is less than the first dopant concentration.