Superfilling secondary metallization process in MEMS fabrication
View Patent ↗Processes are provided herein for the fabrication of MEMS utilizing both a primary metal that is integrated into the final MEMS structure and a sacrificial secondary metal that provides structural support for the primary metal component during machining. More specifically, techniques are disclosed to increase the rate of secondary metal deposition between primary metal features in order to prevent voiding in the sacrificial secondary metal and thus enhance structural support of the primary metal during machining.
1. A process for fabricating a component of a micro-electro-mechanical system, comprising:
a) providing a primary metal structure having cavities along its surface area, the cavities defining predetermined shapes in predetermined locations and having depths of at least 5 micrometers and adapted to receive therein an electroplated sacrificial secondary metal that assists in supporting the primary metal structure;
b) depositing a sacrificial secondary metal around the primary metal structure, such that the rate of deposition is faster within the primary metal structure's cavities than outside of the cavities, to form a complex of primary and secondary metal;
c) machining the complex of primary and secondary metal; and
d) etching away the secondary metal from the machined primary metal structure to form a micro-electro-mechanical system component; wherein the micro-electro-mechanical system is a spring that can be used in conjunction with a probe card assembly to test semiconductor devices.
2. The process of claim 1 , wherein the etching away of the sacrificial secondary metal does not substantially etch the machined primary metal structure.
3. The process of claim 1 , wherein the deposited secondary metal provides horizontal mechanical support to the primary metal during machining.
4. The process of claim 1 , wherein the primary metal comprises nickel.
5. The process of claim 1 , wherein the secondary metal comprises copper.
6. The process of claim 1 , wherein the deposited secondary metal lacks significant voiding.
7. The process of claim 1 , wherein the deposited sacrificial secondary metal is electroplated from a plating bath comprising organic additives selected from the group consisting of brighteners, levelers, and suppressants.
8. The process of claim 7 , wherein the plating bath comprises copper at 50 g/L, acid at 80 g/L, chloride at 50 ppm, a brightener at 12 mL/L, a suppresser at 2 mL/L, and a leveler at 3 mL/L.