Power switching devices having controllable surge current capabilities
View Patent ↗Semiconductor switching devices include a wide band-gap power transistor, a wide band-gap surge current transistor that coupled in parallel to the power transistor, and a wide band-gap driver transistor that is configured to drive the surge current transistor. Substantially all of the on-state output current of the semiconductor switching device flows through the channel of the power transistor when a drain-source voltage of the power transistor is within a first voltage range, which range may correspond, for example, to the drain-source voltages expected during normal operation. In contrast, the semiconductor switching device is further configured so that in the on-state the output current flows through both the surge current transistor and the channel of the power transistor when the drain-source voltage of the power transistor is within a second, higher voltage range.
1. A semiconductor switching device, comprising:
a wide band-gap power transistor;
a second wide band-gap transistor coupled in parallel with the wide band-gap power transistor; and
a wide band-gap driver transistor that is configured to provide a base current to the second wide band-gap transistor;
wherein a gate of the wide band-gap power transistor, a gate of the wide band-gap driver transistor and a contact for an emitter of the second wide band-gap transistor are on a first side of the semiconductor switching device, and wherein a contact for a collector of the second wide band-gap transistor is on a second side of the semiconductor switching device that is opposite the first side; and
wherein a first current path length between a source contact of the wide band-gap power transistor and a drain contact of the wide band-gap power transistor is substantially the same as a second current path length between the contact for the emitter of the second wide band-gap transistor and the contact for the collector of the second wide band-gap transistor.
2. The semiconductor switching device of claim 1 , wherein the semiconductor switching device is configured so that in its on-state substantially all of an output current of the semiconductor switching device flows through a channel of the wide band-gap power transistor when a drain-source voltage of the wide band-gap power transistor is within a first voltage range; and
the semiconductor switching device is further configured so that in its on-state the output current flows through both the second wide band-gap transistor and the channel of the wide band-gap power transistor when the drain-source voltage of the wide band-gap power transistor is within a second voltage range having voltages that are higher than the voltages in the first voltage range.
3. The semiconductor switching device of claim 2 , wherein the wide band-gap power transistor comprises a wide band-gap power MOSFET, wherein the wide band-gap driver transistor comprises a wide band-gap driver MOSFET and the second wide band-gap transistor comprises a wide band-gap bipolar junction transistor (“BJT”), and wherein the semiconductor switching device is configured to saturate a surge current flowing through the semiconductor switching device.
4. The semiconductor switching device of claim 3 , wherein the saturation level is a function of a drain-source voltage of the wide band-gap power MOSFET and a bias voltage that is applied to the gates of the wide band-gap power MOSFET and the wide band-gap driver MOSFET.
5. The semiconductor switching device of claim 1 , wherein the second wide band-gap transistor, the wide band-gap power transistor and the wide band-gap driver transistor each comprise a silicon carbide based device.
6. The semiconductor switching device of claim 2 , wherein the second wide band-gap transistor, the wide band-gap power MOSFET and the wide band-gap driver MOSFET each comprise a silicon carbide based device, and wherein a gate of the wide band-gap power MOSFET is electrically connected to a gate of the wide band-gap driver MOSFET, wherein a first source/drain region of the wide band-gap power MOSFET is electrically connected to a the collector of the second wide band-gap transistor, and wherein a second source/drain region of the wide band-gap power MOSFET is electrically connected to the emitter of the second wide band-gap transistor.
7. The semiconductor switching device of claim 6 , wherein a first source/drain region of the wide band-gap driver MOSFET is electrically connected to the collector of the second wide band-gap transistor and a second source/drain region of the wide band-gap driver MOSFET is electrically connected to a base of the second wide band-gap transistor.
8. The semiconductor switching device of claim 2 , wherein the semiconductor switching device comprises:
an n-type silicon carbide drift layer;
a p-type silicon carbide base layer and a p-type silicon carbide p-well on the n-type silicon carbide drift layer;
an n-type silicon carbide emitter region on the p-type silicon carbide base layer;
a first n-type source/drain region of the wide band-gap driver MOSFET in an upper portion of the silicon carbide p-well; and
a first n-type source/drain region of the wide band-gap power MOSFET in an upper portion of the silicon carbide p-well.
9. The semiconductor switching device of claim 8 , wherein the switching device further comprises:
a heavily-doped p-type silicon carbide region on the p-type silicon carbide base layer adjacent the n-type silicon carbide emitter region; and
an electrical connection between the heavily-doped p-type silicon carbide region and the first n-type source/drain region of the wide band-gap driver MOSFET.
10. The semiconductor switching device of claim 9 , wherein the n-type silicon carbide drift layer comprises the collector of the second wide band-gap transistor, the second source/drain region of the wide band-gap power MOSFET and the second source/drain region of the wide band-gap driver MOSFET.
11. The semiconductor switching device of claim 1 , wherein the collector of the wide band-gap BJT comprises a semiconductor layer that is directly on an underlying semiconductor substrate.
12. The semiconductor switching device of claim 1 , wherein the semiconductor switching device comprises a monolithic device on a single semiconductor substrate.
13. A power semiconductor switch that conducts an output current when in an on-state, comprising:
a silicon carbide drift layer having a first conductivity type;
a silicon carbide base layer on the silicon carbide drift layer, the silicon carbide base layer having a second conductivity type that is different than the first conductivity type;
a silicon carbide well having the second conductivity type on the silicon carbide drift layer;
a silicon carbide emitter region having the first conductivity type on the silicon carbide base layer opposite the silicon carbide drift layer;
a first source/drain region having the first conductivity type in an upper portion of the silicon carbide well that is opposite the silicon carbide drift layer; and
a second source/drain region having the first conductivity type in the upper portion of the silicon carbide well;
wherein the first source/drain region and the silicon carbide drift layer are part of a unipolar wide band-gap semiconductor device that has a first switching speed;
wherein the silicon carbide base layer, the silicon carbide emitter region and the silicon carbide drift layer comprise, respectively, the base, emitter and collector of a wide band-gap bipolar junction transistor (“BJT”) that has a second switching speed that is slower than the first switching speed;
wherein the power semiconductor switch is configured so that the output current flows through the unipolar wide band-gap semiconductor device for a first range of output current levels; and
the power semiconductor switch is further configured so that the output current flows through both the unipolar wide band-gap semiconductor device and the wide band-gap BJT for a second range of output current levels that are higher than the output current levels in the first, range of output current levels,
wherein the unipolar wide band-gap semiconductor device and the wide band-gap BJT are both vertical devices.
14. The power semiconductor switch of claim 13 , wherein the unipolar wide band-gap semiconductor device comprises a power MOSFET that has a gate terminal and a first source/drain region contact on a first side of the device and a second source/drain region contact that is on a second side of the device that is opposite the first side of the device, and wherein the wide band-gap BJT has a base and a second contact on the first side of the device and a third contact that is on the second side of the device.
15. The power semiconductor switch of claim 14 , wherein the BJT and the power MOSFET are implemented in parallel so that the second contact of the wide band-gap BJT and the first source/drain region contact of the power MOSFET form a first common node, and the third contact of the BJT and the second source/drain region contact of the power MOSFET form a second common node.
16. The power semiconductor switch of claim 15 , further comprising a driver MOSFET that is configured to provide a base current to a base of the BJT.
17. The power semiconductor switch of claim 16 , wherein the BJT, the power MOSFET and the driver MOSFET each comprise a silicon carbide semiconductor device.
18. The power semiconductor switch of claim 13 , wherein n-type silicon carbide drift layer comprises the collector of the wide band-gap BJT, and wherein the n-type silicon carbide drift layer is directly on an underlying semiconductor substrate.
19. The power semiconductor switch of claim 16 , further comprising a conductive element that is at least partly external to the base of the BJT that electrically connects a source/drain region of the driver MOSFET to the base of the BJT.
20. The power semiconductor switch of claim 13 , wherein a first current path length between a source contact of the unipolar wide band-gap semiconductor device and a drain contact of the wide band-gap semiconductor device is substantially the same as a second current path length between the contact for the emitter of the wide band-gap BJT and the contact for the collector of the wide band-gap BJT.
21. A power switching device, comprising:
a first wide band-gap MISFET having a gate, a first source/drain region and a second source/drain region;
a second wide band-gap MISFET having a gate, a first source/drain region and a second source/drain region; and
a wide band-gap bipolar junction transistor (“BJT”) having a base, a collector and an emitter;
wherein the gate of the first wide band-gap MISFET is electrically connected to the gate of the second wide band-gap MISFET;
wherein the first source/drain region of the first wide band-gap MISFET is electrically connected to the first source/drain region of the second wide band-gap MISFET and to the collector;
wherein the second source/drain region of the first wide band-gap MISFET is electrically connected to the emitter; and
wherein the second source/drain region of the second wide band-gap MISFET is electrically connected to the base,
wherein the power switching device comprises a vertical device in which the gates of the first and second wide band-gap MISFETs are on a first side of the power switching device and wherein the contact for the collector is on a second side of the power switching device that is opposite the first side of the device, and
wherein the source for the first wide band-gap MISFET and the source for the second wide band-gap MISFET are positioned in a common well that is formed in the collector.
22. The high power switching device of claim 21 , wherein the BJT is configured to provide a current carrying path for at least a portion of surge currents that flow through the power switching device.
23. The high power switching device of claim 21 , wherein the BJT, the first wide band-gap MISFET and the second wide band-gap MISFET comprise silicon carbide based devices.
24. The high power switching device of claim 21 , wherein the switching device comprises:
an n-type silicon carbide drift layer that comprises the collector, the first n-type source/drain region of the power MISFET and the first n-type source/drain region of the driver MISFET;
a p-type silicon carbide base layer that comprises the base on the n-type silicon carbide drift layer;
a p-type silicon carbide p-well on the n-type silicon carbide drift layer;
an n-type silicon carbide emitter region that comprises the emitter on the p-type silicon carbide base layer;
a first gate electrode on the p-well and separated from the second n-type source/drain region of the driver MISFET and the n-type silicon carbide drift layer by a first gate insulation layer; and
a second gate electrode on the p-well and separated from the second n-type source/drain region of the power MISFET and the n-type silicon carbide drift layer by a second gate insulation layer;
wherein the first source/drain region of the driver MISFET comprises an n-type silicon carbide region in an upper portion of the silicon carbide p-well; and
wherein the first n-type source/drain region of the power MISFET comprises an n-type silicon carbide region in an upper portion of the silicon carbide p-well.
25. The high power switching device of claim 24 , wherein the switching device further comprises:
a heavily-doped p-type silicon carbide region on the p-type silicon carbide base layer adjacent the n-type silicon carbide emitter region; and
an electrical connection between the heavily-doped p-type silicon carbide region and the first n-type source/drain region of the driver MISFET.
26. The power switching device of claim 21 , wherein a first current path length between a source contact of the first wide band-gap MISFET and a drain contact of the first wide band-gap MISFET is substantially the same as a second current path length between a contact for the emitter of the wide band-gap BJT and the contact for the collector of the wide band-gap BJT.
27. A method of operating a semiconductor switching device that includes a wide band-gap power transistor, a wide band-gap surge current transistor coupled in parallel with the wide band-gap power transistor and a wide band-gap driver transistor that is configured to provide a base current to the wide band-gap surge current transistor, the method comprising:
operating the semiconductor switching device so that a drain-source voltage of the wide band-gap power transistor is within a first voltage range and substantially all of an output current of the semiconductor switching device flows through a channel of the wide band-gap power transistor; and
operating the semiconductor switching device so that the drain-source voltage of the wide band-gap power transistor is within a second voltage range having voltages that are higher than the voltages in the first voltage range and the output current flows through both the wide band-gap surge current transistor and the channel of the wide band-gap power transistor with more than half of the output current flowing through the wide band-gap surge current transistor.
28. The method of claim 27 , wherein a gate of the wide band-gap power transistor, a gate of the wide band-gap driver transistor and a contact for an emitter of the wide band-gap surge current transistor are on a first side of the semiconductor switching device, and wherein a contact for a collector of the wide band-gap surge current transistor is on a second side of the semiconductor switching device that is opposite the first side.
29. The method of claim 28 , wherein a first current path length between a source contact of the wide band-gap power transistor and a drain contact of the wide band-gap power transistor is substantially the same as a second current path length between the contact for the emitter of the wide band-gap surge current transistor and the contact for the collector of the wide band-gap surge current transistor.
30. The method of claim 27 , further comprising saturating a surge current flowing through the semiconductor switching device.