IP Library Granted Patent US 7,821,119
Granted Patent B2
US 7,821,119 · App. 12/610,900 · Granted Oct 26, 2010

Semiconductor device

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Quick Facts
Patent No.
US 7,821,119
App. No.
12/610,900
Granted
Oct 26, 2010
Kind
B2
Abstract

A semiconductor device is disclosed which includes a tab ( 5 ) for use in supporting a semiconductor chip ( 8 ), a seal section ( 12 ) as formed by sealing the semiconductor chip ( 8 ) with a resin material, more than one tab suspension lead ( 4 ) for support of the tab ( 5 ), a plurality of electrical leads ( 2 ) which have a to-be-connected portion as exposed to outer periphery on the back surface of the seal section ( 12 ) and a thickness reduced portion as formed to be thinner than said to-be-connected portion and which are provided with an inner groove ( 2 e ) and outer groove ( 2 f ) in a wire bonding surface ( 2 d ) as disposed within the seal section ( 12 ) of said to-be-connected portion, and wires ( 10 ) for electrical connection between the leads ( 2 ) and pads ( 7 ) of the semiconductor chip ( 8 ), wherein said thickness reduced portion of the leads ( 2 ) is covered by or coated with a sealing resin material while causing the wires ( 10 ) to be contacted with said to-be-connected portion at specified part lying midway between the outer groove ( 2 f ) and inner groove ( 2 e ) to thereby permit said thickness reduced portion of leads ( 2 ) and the outer groove ( 2 f ) plus the inner groove ( 2 e ) to prevent occurrence of any accidental lead drop-down detachment.

Claims (28)

1. A semiconductor device comprising:

a semiconductor chip having a main surface on which a plurality of pads are formed;

a tab supporting the semiconductor chip;

a plurality of suspension leads formed integral with the tab;

a plurality of leads located around the tab, and arranged between the plurality of suspension leads adjacent to each other;

a plurality of wires electrically coupling the plurality of pads and the plurality of leads, respectively; and

a seal portion sealing the semiconductor chip and the plurality of wires;

wherein a shape in a plan view of the seal portion is comprised of a quadrangle;

wherein in the seal portion, each of the plurality of suspension leads are extended from a central portion of the seal portion toward a corner portion of the seal portion;

wherein in the seal portion, the plurality of leads are only extended in directions perpendicular to sides of the seal portion, respectively;

wherein each of the plurality of leads has a front end portion facing to the tab, and a back end portion opposed to the front end portion;

wherein the plurality of leads includes first leads arranged next to the plurality of suspension leads, and second leads arranged farther from the plurality of suspension leads than the first leads;

wherein a taper portion is formed at the front end portions of the first leads along the suspension leads, respectively;

wherein the taper portion is not formed at the front end portions of the second leads;

wherein the seal portion has an upper surface located at the main surface side of the semiconductor chip, and a lower surface opposed to the upper surface; and

wherein the seal portion seals each of the plurality of leads such that a part of each of the plurality of leads is exposed from the lower surface of the seal portion.

2. A semiconductor device according to claim 1 , wherein in the first lead, a width of a portion where the taper portion is formed is smaller than a width of a portion where the taper portion is not formed.

3. A semiconductor device according to claim 1 , wherein each of the plurality of suspension leads has one end portion located at the tab side, and the other end portion opposed to the one end portion; and

wherein a portion between the one end portion and the other end portion of each of the plurality of suspension leads is covered with the seal portion.

4. A semiconductor device according to claim 3 , wherein the other end portion of each of the plurality of suspension leads is exposed from the lower surface of the seal portion.

5. A semiconductor device according to claim 4 , wherein a thickness of the portion between the one end portion and the other end portion of each of the plurality of suspension leads is thinner than that of the other end portion of the suspension lead.

6. A semiconductor device according to claim 3 , wherein each of the plurality of leads has an upper surface located at the main surface side of the semiconductor chip, a lower surface opposed to the upper surface of the lead and exposed from the seal portion, and a side surface located between the upper surface of the lead and the lower surface of the lead;

wherein a flange protruded from the side surface is formed at the side surface of each of the plurality of leads; and

wherein the taper portion of the first leads arranged next to each of the plurality of suspension leads is formed at the flange.

7. A semiconductor device according to claim 1 , wherein the semiconductor chip has a back surface opposed to the main surface; and

wherein a part of the back surface of the semiconductor chip is contacted with the seal portion.

8. A semiconductor device according to claim 1 , wherein the corner portion of the seal portion is beveled.

9. A semiconductor device according to claim 1 , wherein the plurality of second leads are leads other than the first leads of the plurality of leads.

Assignments (7)
ABSORPTION-TYPE MERGER Recorded Dec 5, 2019
From: RENESAS SEMICONDUCTOR PACKAGE & TEST SOLUTIONS CO., LTD.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 051201/0001 →
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
MERGER Recorded Feb 26, 2015
From: RENESAS SEMICONDUCTOR KYUSHU YAMAGUCHI CO., LTD.
To: RENESAS SEMICONDUCTOR PACKAGE & TEST SOLUTIONS CO., LTD.
Reel/Frame 035036/0529 →
CHANGE OF NAME Recorded Feb 26, 2015
From: NORTHERN JAPAN SEMICONDUCTOR TECHNOLOGIES, INC.
To: RENESAS NORTHERN JAPAN SEMICONDUCTOR, INC.
Reel/Frame 035100/0297 →
MERGER Recorded Feb 26, 2015
From: HITACHI YONEZAWA ELECTRONICS CO., LTD.
To: NORTHERN JAPAN SEMICONDUCTOR TECHNOLOGIES, INC.
Reel/Frame 035100/0259 →
MERGER Recorded Feb 26, 2015
From: RENESAS NORTHERN JAPAN SEMICONDUCTOR, INC.
To: RENESAS SEMICONDUCTOR KYUSHU YAMAGUCHI CO., LTD.
Reel/Frame 035036/0484 →
MERGER AND CHANGE OF NAME Recorded Jul 29, 2010
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024755/0338 →