Semiconductor memory device
View Patent ↗A method includes forming a switching device which includes a vertical channel spaced apart from a semiconductor substrate, and forming a storage device which is positioned on opposed sides of the switching device. The storage device includes a cylindrically shaped storage node, a plate electrode coupled to the storage node, and a dielectric film which is formed between the storage node and plate electrode, the storage nodes being electrically connected to the switching device.
1. A method, comprising:
forming a switching device which includes a vertical channel spaced from a semiconductor substrate; and
forming first and second storage devices which are positioned on opposed sides of the switching device, wherein the storage devices each include a cylindrically shaped storage node, a plate electrode coupled to the storage node, and a dielectric film which is formed between the storage node and plate electrode, the storage nodes being electrically connected to the switching device.
2. The method of claim 1 , wherein the step of forming the switching device includes forming a mesa structure.
3. The method of claim 2 , wherein the step of forming the switching device includes forming a gate electrode which extends around the mesa structure.
4. The method of claim 3 , wherein the step of forming the switching device includes forming a dielectric film which extends around the mesa structure.
5. The method of claim 3 , wherein the step of forming the switching device includes forming single crystalline semiconductor.