Textured chamber surface
View Patent ↗A method of fabricating a process chamber component having a textured surface with raised features. The method comprises providing a process chamber component having a surface, and forming a patterned resist layer on the process chamber component, the patterned resist layer having apertures that expose portions of the surface of the process chamber component therethrough. A textured surface having raised features is formed on the process chamber component by propelling grit particles with a gas that is pressurized to a pressure sufficiently high to cause the grit particles to erode and remove material from the surface.
1. A method of fabricating a process chamber component, the method comprising:
(a) providing a process chamber component having a surface;
(b) forming a patterned resist layer on the process chamber component, the patterned resist layer having apertures that expose portions of the surface of the process chamber component therethrough;
(c) forming a textured surface having raised features on the process chamber component by etching the exposed portions of the surface of the process chamber component through the apertures;
(d) removing the patterned resist layer; and
(e) electrochemically graining the raised features to erode material from the top corners, thereby forming top corners that are rounded.
2. A method according to claim 1 wherein the patterned resist layer comprises a photoresist material, and wherein (b) comprises scanning a laser beam across a surface of the resist layer and developing the resist layer to form the apertures.
3. A method according to claim 1 wherein (b) comprises ablating the patterned resist layer to form apertures in the layer by directing a laser beam onto the resist layer.
4. A method according to claim 1 wherein the patterned resist layer comprises at least one of a polymer, metal or ceramic material.
5. A method according to claim 1 wherein the surface of the process chamber component comprises at least one of titanium, stainless steel, copper, tantalum, tungsten and aluminum.
6. A method according to claim 1 wherein the surface of the process chamber component comprises at least one of aluminum oxide, aluminum nitride, silicon nitride, silicon oxide, quartz, silicon carbide, yttrium oxide, zirconium oxide and titanium oxide.
7. A method according to claim 1 wherein (a) comprises providing a process chamber component comprises one of a chamber enclosure wall, chamber shield, target, cover ring, deposition ring, support ring, insulator ring, coil, coil support, shutter disk, clamp shield or substrate support.
8. A method according to claim 1 , wherein electrochemically graining the raised features to erode material from the top corners, thereby forming top corners that are rounded comprises immersing the raised features in an electrochemical graining solution comprising HCl, and applying an alternating current to provide a current density of from about 807 Amps/m 2 to about 2691 Amps/m 2 .