Nitride semiconductor optical element and manufacturing method thereof
View Patent ↗In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In (Indium) segregation and deterioration of crystallinity. In the manufacture of an InGaN-based nitride semiconductor optical device having an InGaN-based quantum well active layer including an InGaN well layer and an InGaN barrier layer, a step of growing the InGaN barrier layer includes: a first step of adding hydrogen at 1% or more to a gas atmosphere composed of nitrogen and ammonia and growing a GaN layer in the gas atmosphere; and a second step of growing the InGaN barrier layer in a gas atmosphere composed of nitrogen and ammonia.
1. A manufacturing method of a nitride semiconductor optical device comprising steps of sequentially growing a first conductivity type cladding layer, a guide layer, an InGaN-based quantum well active layer, a second conductivity type cladding layer, and a second conductivity type contact layer on a semiconductor substrate, wherein
the step of growing the InGaN-based quantum well active layer includes a step of growing an InGaN well layer and a step of growing an InGaN barrier layer,
the step of growing the InGaN barrier layer further includes: a first step of growing a first film in a gas atmosphere containing nitrogen, ammonia and added hydrogen; and a second step of growing a second film in a gas atmosphere containing nitrogen and ammonia, where a concentration of hydrogen in the second step is lower than a concentration of hydrogen in the first step.
2. The manufacturing method of the nitride semiconductor optical device according to claim 1 , wherein
a concentration of the hydrogen in the first step is from 1 to 10% of the gas atmosphere.
3. The manufacturing method of the nitride semiconductor optical device according to claim 1 , wherein
a thickness of the film grown in the first step is 1 nm to 5 nm.
4. The manufacturing method of the nitride semiconductor optical device according to claim 1 , wherein
a thickness of the film grown in the second step is 4 nm or more.
5. The manufacturing method of the nitride semiconductor optical device according to claim 1 , wherein
the InGaN-based quantum well active layer is grown by metal-organic chemical vapor deposition.
6. The manufacturing method of the nitride semiconductor optical device according to claim 1 , wherein
the step of growing the InGaN well layer further includes: a third step of adding pulse-like hydrogen to a gas atmosphere composed of nitrogen and ammonia and growing a third film in the gas atmosphere; and a fourth step of growing a fourth film in a gas atmosphere composed of nitrogen and ammonia.
7. The manufacturing method of the nitride semiconductor optical device according to claim 1 , wherein
the InGaN barrier layer is formed on the InGaN well layer through the second step after the first step.
8. A manufacturing method of a nitride semiconductor optical device comprising steps of sequentially growing a first conductivity type cladding layer, an InGaN guide layer, an InGaN-based quantum well active layer, a second conductivity type cladding layer, and a second conductivity type contact layer on a semiconductor substrate, wherein
the step of growing the InGaN guide layer includes: a first step of growing a film in a gas atmosphere composed of nitrogen and ammonia; a second step of adding hydrogen to a gas atmosphere composed of nitrogen and ammonia and growing a film in the gas atmosphere after the first step; and a third step of growing a film in a gas atmosphere composed of nitrogen and ammonia after the second step.
9. The manufacturing method of the nitride semiconductor optical device according to claim 8 , wherein
an addition concentration of the hydrogen in the second step is 1% or higher of the gas atmosphere.