IP Library Assignment 034197/0571
Patent Assignment
Reel/Frame 034197/0571

Change of Name

Recorded: 2014-11-10 Pages: 15
Assignor
OPNEXT JAPAN, INC.
Executed: 2012-07-25
Assignee
OCLARO JAPAN, INC.
4-1-55 OYAMA, CHUO-KU, SAGAMIHARA-SHI,, KANAGAWA, 252-5250, JAPAN
Covered Properties (18)
Semiconductor Materials, Methods for Fabricating Semiconductor Materials, and Semiconductor Devices
Patent: 6,377,596 →
Application: 09/043,384 →
Optical Information Processor and Semiconductor Light Emitting Device Suitable for the Same
Patent: 6,542,526 →
Application: 09/297,147 →
Semiconductor Devices
Patent: 6,459,712 →
Application: 09/895,079 →
Publication: US 2001/0038655
Laser Diodes and Manufacturing Methods
Patent: 6,576,503 →
Application: 09/902,778 →
Publication: US 2002/0042157
Optical Information Processing Equipment and Semiconductor Light Emitting Device Suitable Therefor
Patent: 6,639,925 →
Application: 09/964,519 →
Publication: US 2002/0031153
Optical Semiconductor Device, Manufacturing Method Therefor, and Optical Semiconductor Apparatus
Patent: 7,463,662 →
Application: 11/349,172 →
Publication: US 2006/0222030
Opto-Semiconductor Devices
Patent: 7,443,901 →
Application: 11/387,986 →
Publication: US 2006/0222031
Nitride Semiconductor Based Light-Emitting Device and Manufacturing Method Thereof
Patent: 7,364,929 →
Application: 11/492,924 →
Publication: US 2007/0224715
Semiconductor Laser Device
Patent: 7,738,521 →
Application: 11/606,186 →
Publication: US 2007/0121693
Manufacturing Method of Optical Semiconductor Device
Patent: 7,674,391 →
Application: 11/700,215 →
Publication: US 2007/0284336
Nitride Semiconductor Lasers and Its Manufacturing Method
Patent: 7,596,160 →
Application: 11/841,010 →
Publication: US 2008/0247433
Semiconductor Laser Diode and Its Fabrication Process
Patent: 7,746,910 →
Application: 12/023,168 →
Publication: US 2008/0181276
Semiconductor Laser Diode and the Manufacturing Method Thereof
Patent: 7,653,114 →
Application: 12/153,681 →
Publication: US 2008/0291960
Nitride Semiconductor Light Emitting Device and Method of Manufacturing the Same
Patent: 8,000,364 →
Application: 12/194,149 →
Publication: US 2009/0207872
Nitride Semiconductor Light Emitting Device and Method for Manufacturing the Same
Patent: 7,822,088 →
Application: 12/216,817 →
Publication: US 2009/0016397
Opto-Semiconductor Devices
Patent: 7,720,127 →
Application: 12/232,652 →
Publication: US 2009/0041076
Semiconductor Laser Device
Patent: 7,792,173 →
Application: 12/328,186 →
Publication: US 2009/0147816
Nitride Semiconductor Optical Element and Manufacturing Method Thereof
Patent: 8,124,432 →
Application: 12/630,008 →
Publication: US 2010/0150194
Related Assignments (2)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Aug 30, 2012
From: HITACHI, LTD.
To: OPNEXT JAPAN, INC.
Reel/Frame 028878/0099 →
Assignment of Assignor's Interest Nov 21, 2014
From: OCLARO JAPAN, INC.
To: USHIO OPTO SEMICONDUCTORS, INC.
Reel/Frame 034225/0494 →