IP Library Assignment 034225/0494
Patent Assignment
Reel/Frame 034225/0494

Assignment of Assignor's Interest

Recorded: 2014-11-21 Pages: 4
Assignor
OCLARO JAPAN, INC.
Executed: 2014-10-27
Assignee
USHIO OPTO SEMICONDUCTORS, INC.
2-6-1 OTEMACHI, CHIYODA-KU,, TOKYO, 100-8150, JAPAN
Covered Properties (24)
Semiconductor Materials, Methods for Fabricating Semiconductor Materials, and Semiconductor Devices
Patent: 6,377,596 →
Application: 09/043,384 →
Optical Information Processor and Semiconductor Light Emitting Device Suitable for the Same
Patent: 6,542,526 →
Application: 09/297,147 →
Semiconductor Devices
Patent: 6,459,712 →
Application: 09/895,079 →
Publication: US 2001/0038655
Laser Diodes and Manufacturing Methods
Patent: 6,576,503 →
Application: 09/902,778 →
Publication: US 2002/0042157
Optical Information Processing Equipment and Semiconductor Light Emitting Device Suitable Therefor
Patent: 6,639,925 →
Application: 09/964,519 →
Publication: US 2002/0031153
Optical Semiconductor Device, Manufacturing Method Therefor, and Optical Semiconductor Apparatus
Patent: 7,463,662 →
Application: 11/349,172 →
Publication: US 2006/0222030
Opto-Semiconductor Devices
Patent: 7,443,901 →
Application: 11/387,986 →
Publication: US 2006/0222031
Nitride Semiconductor Based Light-Emitting Device and Manufacturing Method Thereof
Patent: 7,364,929 →
Application: 11/492,924 →
Publication: US 2007/0224715
Semiconductor Laser Device
Patent: 7,738,521 →
Application: 11/606,186 →
Publication: US 2007/0121693
Manufacturing Method of Optical Semiconductor Device
Patent: 7,674,391 →
Application: 11/700,215 →
Publication: US 2007/0284336
Nitride Semiconductor Lasers and Its Manufacturing Method
Patent: 7,596,160 →
Application: 11/841,010 →
Publication: US 2008/0247433
Semiconductor Laser Diode and Its Fabrication Process
Patent: 7,746,910 →
Application: 12/023,168 →
Publication: US 2008/0181276
Semiconductor Laser Diode and the Manufacturing Method Thereof
Patent: 7,653,114 →
Application: 12/153,681 →
Publication: US 2008/0291960
Nitride Semiconductor Light Emitting Device and Method of Manufacturing the Same
Patent: 8,000,364 →
Application: 12/194,149 →
Publication: US 2009/0207872
Nitride Semiconductor Light Emitting Device and Method for Manufacturing the Same
Patent: 7,822,088 →
Application: 12/216,817 →
Publication: US 2009/0016397
Opto-Semiconductor Devices
Patent: 7,720,127 →
Application: 12/232,652 →
Publication: US 2009/0041076
Semiconductor Laser Device
Patent: 7,792,173 →
Application: 12/328,186 →
Publication: US 2009/0147816
Nitride Semiconductor Optical Element and Manufacturing Method Thereof
Patent: 8,124,432 →
Application: 12/630,008 →
Publication: US 2010/0150194
Multi-Beam Semiconductor Laser Device
Patent: 8,494,019 →
Application: 12/750,838 →
Publication: US 2010/0254421
Semiconductor Optical Device
Patent: 8,442,085 →
Application: 12/948,794 →
Publication: US 2011/0116526
Nitride Semiconductor Light Emitting Device and Method of Manufacturing the Same
Patent: 8,686,442 →
Application: 13/478,024 →
Publication: US 2012/0228664
AlGaInP-BASED SEMICONDUCTOR LASER
Patent: 9,425,583 →
Application: 13/714,508 →
Publication: US 2013/0182735
Multi-Beam Semiconductor Laser Device
Patent: 9,231,374 →
Application: 14/466,039 →
Publication: US 2015/0055670
Semiconductor Laser
Application: 14/489,899 →
Publication: US 2015/0003483
Related Assignments (2)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Aug 30, 2012
From: HITACHI, LTD.
To: OPNEXT JAPAN, INC.
Reel/Frame 028878/0099 →
Change of Name Nov 10, 2014
From: OPNEXT JAPAN, INC.
To: OCLARO JAPAN, INC.
Reel/Frame 034197/0571 →