Semiconductor device and method of manufacturing the same
View Patent ↗A first electronic circuit component and a second electronic circuit component are electrically connected to an electro-conductive member via a first solder and a second solder, respectively. The electro-conductive member is formed in a resin film. The electro-conductive member is configured as containing a second diffusion barrier metal film. The second diffusion barrier metal film prevents diffusion of the second solder. Between the electro-conductive member and the first solder, a first diffusion barrier metal film is provided. The first diffusion barrier metal film prevents diffusion of the first solder. On the first surface of the resin film and on the electro-conductive member, an adhesive metal film is formed so as to contact with the resin film and the electro-conductive member. The adhesive metal film has stronger adhesiveness to the resin film than either of those of the first solder and the first diffusion barrier metal film.
1. A method of manufacturing a semiconductor device comprising:
forming, in an insulating film, an electro-conductive member, at least a part of said electro-conductive member being constituted by a second diffusion barrier metal film;
forming, on said insulating film and on said electro-conductive member, an adhesive metal film so that said adhesive metal film is brought into contact with said insulating film and said electro-conductive member;
forming, on said adhesive metal film, a first diffusion barrier metal film;
placing, on said first diffusion barrier metal film, a first electronic circuit component via a first solder so that said first electronic circuit component is electrically connected to said electro-conductive member; and
placing, on a side of said insulating film opposite to said first electronic circuit component, a second electronic circuit component via a second solder so that said second electronic circuit component is electrically connected to said electro-conductive member,
wherein said adhesive metal film has stronger adhesiveness to said insulating film than adhesiveness of said first solder to said insulating film and adhesiveness of said first diffusion barrier metal film to said insulating film, and
said first and second diffusion barrier metal films prevent diffusion of said first and second solders, respectively.
2. The method of manufacturing a semiconductor device as claimed in claim 1 , further comprising:
forming said insulating film on a supporting substrate, prior to said forming said electro-conductive member; and
removing said supporting substrate, posterior to said placing said first electronic circuit component, and prior to said placing said second electronic circuit component.