High voltage GaN transistors
View Patent ↗A multiple field plate transistor includes an active region, with a source, a drain, and a gate. A first spacer layer is over the active region between the source and the gate and a second spacer layer over the active region between the drain and the gate. A first field plate on the first spacer layer is connected to the gate. A second field plate on the second spacer layer is connected to the gate. A third spacer layer is on the first spacer layer, the second spacer layer, the first field plate, the gate, and the second field plate, with a third field plate on the third spacer layer and connected to the source. The transistor exhibits a blocking voltage of at least 600 Volts while supporting a current of at least 2 Amps with an on resistance of no more than 5.0 mΩ-cm 2 , of at least 600 Volts while supporting a current of at least 3 Amps with an on resistance of no more than 5.3 mΩ-cm 2 , of at least 900 Volts while supporting a current of at least 2 Amps with an on resistance of no more than 6.6 mΩ-cm 2 , or a blocking voltage of at least 900 Volts while supporting a current of at least 3 Amps with an on resistance of no more than 7.0 mΩ-cm 2 .
1. A multiple field plate transistor, comprising:
an active region;
a source electrode in electrical contact with said active region;
a drain electrode in electrical contact with said active region;
a gate in electrical contact with said active region between said source and said drain;
a first insulating spacer layer disposed over said active region between said source and said gate and said drain and said gate, said gate disposed in an opening in said first spacer layer;
a gate connected field plate disposed on said first insulating spacer layer and extending from said gate toward said source and toward said drain;
a field plate spacer layer covering at least a portion of said gate connected field plate and said first insulating spacer layer; and
a source connected plate disposed on said field plate spacer layer and electrically connected to said source.
2. The transistor of claim 1 , wherein said gate connected field plate is integral to said gate.
3. The transistor of claim 1 , wherein said source connected field plate is electrically isolated from the layers below it by said field plate spacer layer.
4. The transistor of claim 1 , wherein said field plate spacer layer covers said gate, said gate connected field plate and said first insulating spacer layer.
5. The transistor of claim 4 , wherein said source connected field plate extends toward said drain, over said gate, over said gate connected field plate, and on said field plate spacer layer.
6. The transistor of claim 1 , having an L g length ranging from approximately 1.2 microns to approximately 1.5 microns, an L gd length ranging from approximately 13.3 microns to approximately 18 microns, a L ds length ranging from approximately 16 microns to 21.5 microns, an L fd1 length ranging from approximately 1.5 microns to 1.8 microns, and an L fd2 length of approximately 4.5 microns.
7. The transistor of claim 1 , exhibiting a blocking voltage of at least 600 Volts while supporting a current of at least 2 Amps with an on resistance of no more than 5.0 mΩ-cm 2 .
8. The transistor of claim 1 , exhibiting a blocking voltage of at least 600 Volts while supporting a current of at least 3 Amps with an on resistance of no more than 5.3 mΩ-cm 2 .
9. The transistor of claim 1 , exhibiting a blocking voltage of at least 900 Volts while supporting a current of at least 2 Amps with an on resistance of no more than 6.6 mΩ-cm 2 .
10. The transistor of claim 1 , exhibiting a blocking voltage of at least 900 Volts while supporting a current of at least 3 Amps with an on resistance of no more than 7.0 mΩ-cm 2 .
11. The transistor of claim 1 , wherein said transistor comprises a high electron mobility transistor.
12. The transistor of claim 1 , wherein said first insulating spacer layer and field plate spacer layer comprise insulating materials.
13. The transistor of claim 1 , wherein said first insulating spacer layer and field plate spacer layer comprise silicon nitride (SiN).
14. The transistor of claim 1 , wherein said gate is recessed in said active region.
15. A multiple field plate transistor, comprising:
an active region;
a source electrode in electrical contact with said active region;
a drain electrode in electrical contact with said active region;
a gate in electrical contact with said active region between said source and said drain;
a gate connected field plate electrically coupled to said gate and having portions extending from said gate toward said source and toward said drain, said extending portions electrically insulated from the layers and features below them except through said gate; and
a source connected plate disposed over at least a portion of said gate connected field plate and electrically connected to said source, said source connected field plate electrically insulated from the layers and features below it except through said source.
16. The transistor of claim 15 , further comprising a first spacer layer disposed over said active region between said source and said gate and said drain and said gate, said gate disposed in an opening in said first spacer layer with said gate connected field plate on said first spacer layer and electrically insulated from the layers and features below it by said first spacer layer.
17. The transistor of claim 15 , further comprising a field plate spacer layer covering at least a portion of said gate connected field plate and a portion of the top surface of said transistor between the edge of said gate connected field plate and said drain, said source connected field plate on said field plate spacer layer and electrically insulated from the layers and features below it by said field plate spacer layer.
18. The transistor of claim 1 , wherein said gate connected field plate is integral to said gate.
19. The transistor of claim 15 , exhibiting a blocking voltage of at least 600 Volts while supporting a current of at least 2 Amps with an on resistance of no more than 5.0 mΩ-cm 2 .
20. The transistor of claim 15 , exhibiting a blocking voltage of at least 600 Volts while supporting a current of at least 3 Amps with an on resistance of no more than 5.3 mΩ-cm 2 .
21. The transistor of claim 15 , exhibiting a blocking voltage of at least 900 Volts while supporting a current of at least 2 Amps with an on resistance of no more than 6.6 mΩ-cm 2 .
22. The transistor of claim 15 , exhibiting a blocking voltage of at least 900 Volts while supporting a current of at least 3 Amps with an on resistance of no more than 7.0 mΩ-cm 2 .
23. The transistor of claim 15 , wherein said gate is partially recessed in said active region.